分离式半导体产品 SI5906DU-T1-GE3品牌、价格、PDF参数

SI5906DU-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI5906DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PPAK FET 0 1:$0.77000
25:$0.59520
100:$0.52500
250:$0.45500
500:$0.38500
1,000:$0.30625
SI5906DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PPAK FET 0 3,000:$0.25375
6,000:$0.23625
15,000:$0.22750
30,000:$0.21875
SI4214DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.25375
SI3529DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 6-TSOP 0 3,000:$0.21750
SI3529DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 40V 6-TSOP 0 3,000:$0.21750
SI1970DH-T1-GE3 Vishay Siliconix MOSFET N-CH DUAL 30V SC70-6 0 3,000:$0.21750
SI1988DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V DUAL SC-70-6 0 1:$0.66000
25:$0.51000
100:$0.45000
250:$0.39000
500:$0.33000
1,000:$0.26250
SI1988DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V DUAL SC-70-6 0 1:$0.66000
25:$0.51000
100:$0.45000
250:$0.39000
500:$0.33000
1,000:$0.26250
SI1988DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V DUAL SC-70-6 0 3,000:$0.21750
6,000:$0.20250
15,000:$0.19500
30,000:$0.18750
75,000:$0.18450
150,000:$0.18000
SI5906DU-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds(最大)@ Id, Vgs @ 25° C: 31 毫欧 @ 4.8A,10V
Id 时的 Vgs(th)(最大): 2.2V @ 250µA
闸电荷(Qg) @ Vgs: 8.6nC @ 10V
输入电容 (Ciss) @ Vds: 300pF @ 15V
功率 - 最大: 10.4W
安装类型: 表面贴装
封装/外壳: PowerPAK? CHIPFET? 双
供应商设备封装: PowerPAK? ChipFet 双
包装: 剪切带 (CT)