| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI5980DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V PPAK CHIPFET | 432 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
| SI5980DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V PPAK CHIPFET | 432 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
| SI6933DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V 8-TSSOP | 0 | |
| SI5980DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V PPAK CHIPFET | 0 | 3,000:$0.27550 6,000:$0.25650 15,000:$0.24700 30,000:$0.23750 75,000:$0.23370 150,000:$0.22800 |
| SI3585DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6-TSOP | 740 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
| SI5975DC-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 12V 3.1A CHIPFET | 0 | |
| SI5943DU-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH 12V 6A 8PWRPAK | 0 | |
| SI5935DC-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH 20V 1206-8 | 0 | |
| SI5933DC-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH 20V 2.7A 1206-8 | 0 | |
| SI5915DC-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 8V 3.4A 1206-8 | 0 | |
| SI5915BDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V CHIPFET 1206-8 | 0 | |
| SI5905BDC-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH D-S 8V 1206-8 | 0 | |
| SI4940DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 40V 8-SOIC | 0 | |
| SI4908DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 40V 5A 8-SOIC | 0 | |
| SI4834BDY-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 30V 5.7A 8-SOIC | 0 | |
| SI4830ADY-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 30V 5.7A 8-SOIC | 0 | |
| SI4565ADY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 8-SOIC | 0 | |
| SI4230DY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 8A 8SOIC | 0 | |
| SI3909DV-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 6TSOP | 0 | |
| SI3905DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 8V 6-TSOP | 0 | |
| SI5920DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 1206-8 | 0 | |
| SI5920DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 1206-8 | 0 | |
| SI5920DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 1206-8 | 0 | |
| SI5511DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 1206-8 | 0 | |
| SI5511DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 1206-8 | 0 | |
| SI5511DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 1206-8 | 0 | |
| SI4501ADY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 0 | |
| SI4501ADY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 0 | |
| SI4501ADY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 0 | |
| SI3585DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6-TSOP | 740 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | 2 个 N 沟道（双） |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 100V |
| 电流 - 连续漏极(Id) @ 25° C: | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 567 毫欧 @ 400mA，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 3.3nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 78pF @ 50V |
| 功率 - 最大: | 7.8W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | PowerPAK? CHIPFET? 双 |
| 供应商设备封装: | PowerPAK? ChipFet 双 |
| 包装: | Digi-Reel® |