| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI1972DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V DUAL SC-70-6 | 0 | 3,000:$0.21750 6,000:$0.20250 15,000:$0.19500 30,000:$0.18750 75,000:$0.18450 150,000:$0.18000 |
| SI1903DL-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 410MA SC70-6 | 565 | 1:$0.63000 25:$0.43880 100:$0.37620 250:$0.32492 500:$0.27930 1,000:$0.21660 |
| SI1903DL-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 410MA SC70-6 | 565 | 1:$0.63000 25:$0.43880 100:$0.37620 250:$0.32492 500:$0.27930 1,000:$0.21660 |
| SI1903DL-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 410MA SC70-6 | 0 | 3,000:$0.17670 6,000:$0.16530 15,000:$0.15390 30,000:$0.14535 75,000:$0.14250 150,000:$0.13680 |
| SI5933CDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1206-8 | 428 | 1:$0.61000 25:$0.42360 100:$0.36300 250:$0.31352 500:$0.26950 1,000:$0.20900 |
| SI5933CDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1206-8 | 428 | 1:$0.61000 25:$0.42360 100:$0.36300 250:$0.31352 500:$0.26950 1,000:$0.20900 |
| SI5933CDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1206-8 | 0 | 3,000:$0.17050 6,000:$0.15950 15,000:$0.14850 30,000:$0.14025 75,000:$0.13750 150,000:$0.13200 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | 2 个 N 沟道（双） |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 1.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 225 毫欧 @ 1.3A，10V |
| Id 时的 Vgs(th)（最大）: | 2.8V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 2.8nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 75pF @ 15V |
| 功率 - 最大: | 1.25W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装: | SC-70-6 |
| 包装: | 带卷 (TR) |