分离式半导体产品 BSL806N L6327品牌、价格、PDF参数

BSL806N L6327 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSL806N L6327 Infineon Technologies MOSFET N-CH 20V 2.3A 6TSOP 3,000 3,000:$0.19081
6,000:$0.17850
15,000:$0.16619
30,000:$0.15695
75,000:$0.15388
150,000:$0.14772
BSD235C H6327 Infineon Technologies MOSFET N/P-CH 20V SOT363 6,890 1:$0.55000
10:$0.39200
25:$0.32360
100:$0.26100
250:$0.18792
500:$0.15138
1,000:$0.11745
BSD235C H6327 Infineon Technologies MOSFET N/P-CH 20V SOT363 6,890 1:$0.55000
10:$0.39200
25:$0.32360
100:$0.26100
250:$0.18792
500:$0.15138
1,000:$0.11745
BSD235C H6327 Infineon Technologies MOSFET N/P-CH 20V SOT363 6,000 3,000:$0.09396
6,000:$0.08874
15,000:$0.08091
30,000:$0.07569
75,000:$0.06786
150,000:$0.06525
BSD840N H6327 Infineon Technologies MOSFET N-CH 20V 0.88A SOT363 2,842 1:$0.60000
10:$0.42700
25:$0.33720
100:$0.25620
250:$0.18148
500:$0.14518
1,000:$0.11102
BSD840N H6327 Infineon Technologies MOSFET N-CH 20V 0.88A SOT363 2,842 1:$0.60000
10:$0.42700
25:$0.33720
100:$0.25620
250:$0.18148
500:$0.14518
1,000:$0.11102
BSD840N H6327 Infineon Technologies MOSFET N-CH 20V 0.88A SOT363 0 3,000:$0.08540
6,000:$0.07686
15,000:$0.06832
30,000:$0.06405
75,000:$0.05679
150,000:$0.05338
BSD235N H6327 Infineon Technologies MOSFET N-CH DUAL 20V SOT363 5,590 1:$0.49000
10:$0.34500
25:$0.28520
100:$0.23000
250:$0.16560
500:$0.13340
1,000:$0.10350
BSD235N H6327 Infineon Technologies MOSFET N-CH DUAL 20V SOT363 5,590 1:$0.49000
10:$0.34500
25:$0.28520
100:$0.23000
250:$0.16560
500:$0.13340
1,000:$0.10350
BSD235N H6327 Infineon Technologies MOSFET N-CH DUAL 20V SOT363 3,000 3,000:$0.08280
6,000:$0.07820
15,000:$0.07130
30,000:$0.06670
75,000:$0.05980
150,000:$0.05750
2N7002DW H6327 Infineon Technologies MOSFET 2N-CH 60V 0.3A SOT363 5,964 1:$0.44000
10:$0.31500
25:$0.24880
100:$0.18900
250:$0.13388
500:$0.10710
1,000:$0.08190
2N7002DW H6327 Infineon Technologies MOSFET 2N-CH 60V 0.3A SOT363 5,964 1:$0.44000
10:$0.31500
25:$0.24880
100:$0.18900
250:$0.13388
500:$0.10710
1,000:$0.08190
2N7002DW H6327 Infineon Technologies MOSFET 2N-CH 60V 0.3A SOT363 3,000 3,000:$0.06300
6,000:$0.05670
15,000:$0.05040
30,000:$0.04725
75,000:$0.04190
150,000:$0.03938
BSL806N L6327 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 57 毫欧 @ 2.3A,2.5V
Id 时的 Vgs(th)(最大): 750mV @ 11µA
闸电荷(Qg) @ Vgs: 1.7nC @ 2.5V
输入电容 (Ciss) @ Vds: 259pF @ 10V
功率 - 最大: 500mW
安装类型: 表面贴装
封装/外壳: SC-74,SOT-457
供应商设备封装: PG-TSOP6-6
包装: 带卷 (TR)