| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PMGD290XN,115 | NXP Semiconductors | MOSFET N-CH TRENCH DL 20V SOT363 | 318,690 | 1:$0.48000 10:$0.37800 25:$0.31880 100:$0.25990 250:$0.21528 500:$0.17784 1,000:$0.13320 |
| PMGD290XN,115 | NXP Semiconductors | MOSFET N-CH TRENCH DL 20V SOT363 | 318,690 | 1:$0.48000 10:$0.37800 25:$0.31880 100:$0.25990 250:$0.21528 500:$0.17784 1,000:$0.13320 |
| PMGD400UN,115 | NXP Semiconductors | MOSFET N-CH TRENCH DL 30V SOT363 | 9,000 | 3,000:$0.11900 6,000:$0.11200 15,000:$0.10400 30,000:$0.09600 75,000:$0.09200 150,000:$0.08900 |
| PMGD400UN,115 | NXP Semiconductors | MOSFET N-CH TRENCH DL 30V SOT363 | 12,680 | 1:$0.48000 10:$0.37800 25:$0.31880 100:$0.25990 250:$0.21528 500:$0.17784 1,000:$0.13320 |
| PMGD400UN,115 | NXP Semiconductors | MOSFET N-CH TRENCH DL 30V SOT363 | 9,000 | 3,000:$0.09504 6,000:$0.08928 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | 2 个 N 沟道（双） |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 860mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 350 毫欧 @ 200mA，4.5V |
| Id 时的 Vgs(th)（最大）: | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 0.72nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | 34pF @ 20V |
| 功率 - 最大: | 410mW |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装: | 6-TSSOP |
| 包装: | 剪切带 (CT) |