分离式半导体产品 CSD87330Q3D品牌、价格、PDF参数

CSD87330Q3D • 品牌、价格
元器件型号 厂商 描述 数量 价格
CSD87330Q3D Texas Instruments IC PWR BLOCK SYNC BUCK 30V 8SON 1,165 1:$2.39000
10:$2.16000
25:$1.93520
100:$1.74000
250:$1.54500
500:$1.35000
1,000:$1.11750
CSD87330Q3D Texas Instruments IC PWR BLOCK SYNC BUCK 30V 8SON 1,165 1:$2.39000
10:$2.16000
25:$1.93520
100:$1.74000
250:$1.54500
500:$1.35000
1,000:$1.11750
CSD87352Q5D Texas Instruments MOSFET 2N-CH 30V 25A 8SON 2,500 2,500:$1.14800
5,000:$1.10500
12,500:$1.06300
25,000:$1.04600
62,500:$1.02000
CSD87352Q5D Texas Instruments MOSFET 2N-CH 30V 25A 8SON 4,861 1:$2.71000
10:$2.44800
25:$2.19320
100:$1.97200
250:$1.75100
500:$1.53000
1,000:$1.26650
CSD87352Q5D Texas Instruments MOSFET 2N-CH 30V 25A 8SON 4,861 1:$2.71000
10:$2.44800
25:$2.19320
100:$1.97200
250:$1.75100
500:$1.53000
1,000:$1.26650
CSD87330Q3D • PDF参数
类别: 分离式半导体产品
FET 型: 2 N 沟道(半桥)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: -
Id 时的 Vgs(th)(最大): 2.1V @ 250µA
闸电荷(Qg) @ Vgs: 5.8nC @ 4.5V
输入电容 (Ciss) @ Vds: 900pF @ 15V
功率 - 最大: 6W
安装类型: 表面贴装
封装/外壳: 8-LDFN 裸露焊盘
供应商设备封装: 8-SON-EP(3.3x3.3)
包装: 剪切带 (CT)