| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SIA533EDJ-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 12V 4.5A SC70-6 | 3,000 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| SIS902DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 75V 1212-8 PPAK | 6,745 | 1:$0.90000 25:$0.69720 100:$0.61500 250:$0.53300 500:$0.45100 1,000:$0.35875 |
| SI7232DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 1212-8 PPAK | 3,000 | 3,000:$0.33350 6,000:$0.31050 15,000:$0.29900 30,000:$0.28750 75,000:$0.28290 150,000:$0.27600 |
| SI4228DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 2,500 | 2,500:$0.35000 5,000:$0.33250 12,500:$0.31875 25,000:$0.31000 62,500:$0.30000 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | N 和 P 沟道 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 12V |
| 电流 - 连续漏极(Id) @ 25° C: | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 34 毫欧 @ 4.6A，4.5V |
| Id 时的 Vgs(th)（最大）: | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 420pF @ 6V |
| 功率 - 最大: | 7.8W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | PowerPAK? SC-70-6 双 |
| 供应商设备封装: | PowerPAK? SC-70-6 双 |
| 包装: | 带卷 (TR) |