参数资料
型号: ESDA8V2-1MX2
厂商: STMICROELECTRONICS
元件分类: 电源管理
英文描述: POWER SUPPLY SUPPORT CKT, DSO2
封装: ROHS COMPLIANT, QFN-2
文件页数: 1/10页
文件大小: 252K
代理商: ESDA8V2-1MX2
August 2008
Rev 1
1/10
ESDA8V2-1MX2
EOS and ESD Transil protection for charger and battery port
Features
Breakdown voltage VBR = 8.2 V
Unidirectional device
High peak power dissipation: 500 W
(8/20 s waveform)
ESD protection level better than
IEC 61000-4-2, level 4:
30 kV contact discharge
Low leakage current (< 0.5 A @ 5 V)
Very small PCB area (1.45 mm2)
RoHS compliant
Benefits
High EOS and ESD protection level
High integration
Suitable for high density boards
Tiny package
Complies with the following standards:
IEC 61000-4-2 level 4
– ±15 kV (air discharge)
– ±8 kV (contact discharge)
MIL STD 883G - Method 3015-7: class 3B
– HBM (human body model):
≥8kV
Applications
Where EOS and ESD transient overvoltage
protection in sensitive equipment is required,
such as:
Computers
Printers
Communication systems
Cellular phone handsets and accessories
Video equipment
Figure 1.
Functional diagram (top view)
Description
The ESDA8V2-1MX2 is a unidirectional single line
Transil diode designed specifically for the
protection of integrated circuits in portable
equipment and miniaturized electonic devices
subject to EOS and ESD transient overvoltages.
TM: Transil is a trademark of STMicroelectronics
QFN 2L package
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