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参数资料
| 型号： | FDMC8026S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 19A 8MLP |
| 标准包装： | 3,000 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.4 毫欧 @ 19A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 52nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3165pF @ 15V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | MLP（3.3x3.3） |
| 包装： | 带卷 (TR) |
Typical Characteristics T J = 25 °C unless otherwise noted
100
5
80
60
V GS = 10 V
V GS = 6 V
V GS = 4.5 V
V GS = 4 V
4
3
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 3 V
40
V GS = 3.5 V
V GS = 3 V
2
V GS = 3.5 V
20
0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1
0
V GS = 4 V V GS = 4.5 V V GS = 6 V V GS = 10 V
0.0
0.5 1.0 1.5
2.0
0
20
40
60
80
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.6
I D = 19 A
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
12
PULSE DURATION = 80 μ s
1.4
V GS = 10 V
9
I D = 19 A
DUTY CYCLE = 0.5% MAX
1.2
6
1.0
T J = 125 o C
0.8
3
T J = 25 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
0
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs. Junction Temperature
100
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
80
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to
Source Voltage
100
V GS = 0 V
V DS = 5 V
T J = 125 o C
10
T J = 125 o C
60
T J = 25 o C
T J = 25 o C
40
T J = -55 o C
1
T J = -55 o C
20
0
0.1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
?2013 Fairchild Semiconductor Corporation
FDMC8026S Rev.C6
3
www.fairchildsemi.com
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| FDMC8030 | 功能描述:MOSFET FPS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FDMC8200 | 功能描述:MOSFET DUAL N-CHANNEL PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC8200 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor |
| FDMC8200_F128 | 功能描述:MOSFET Dual N-CH 30V 12A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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