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| 型号： | FDS5670 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 10A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 70nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2900pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS5670DKR |
Electrical Characteristics
T A = 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
60
58
V
mV/ ° C
? T J
Coefficient
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V DS = 48 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
1
100
-100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
Gate Threshold Voltage
Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
2
2.4
6.8
4
V
mV/ ° C
? T J
Temperature Coefficient
R DS(on)
Static Drain-Source
On-Resistance
V GS = 10 V, I D = 10 A
V GS = 10 V, I D = 10 A, T J =125 ° C
0.012
0.019
0.014
0.027
?
V GS = 6 V, I D = 9 A
0.014
0.017
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 5 V
V DS = 5 V, I D = 10 A
25
39
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V, V GS = 0 V
f = 1.0 MHz
2900
685
180
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 30 V, I D = 1 A
V GS = 10 V, R GEN = 6 ?
V DS = 20 V, I D = 10 A
V GS = 10 V,
16
10
50
23
49
9
10.4
29
20
80
42
70
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
2.1
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 2.1 A
(Note 2)
0.72
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R θ JC is guaranteed by design while R θ JA is determined by the user's board design.
a) 50 ° C/W when
mounted on a 0.5 in 2
pad of 2 oz. copper.
b) 105 ° C/W when
mounted on a 0.02 in 2
pad of 2 oz. copper.
c) 125 ° C/W when mounted
?????on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDS5670 Rev. B
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|---|---|
| FDS5672 | MOSFET N-CH 60V 12A 8-SOIC |
| FDS5680 | MOSFET N-CH 60V 8A SO-8 |
| FDS5690 | MOSFET N-CH 60V 7A 8SOIC |
| FDS6294 | MOSFET N-CH 30V 13A 8SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS5670 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS5670 | 制造商:Fairchild Semiconductor Corporation 功能描述:SO8 SINGLE NCH 60V |
| FDS5672 | 功能描述:MOSFET 60V 12A 10 OHM NCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS5680 | 功能描述:MOSFET SO-8 N-CH 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS5680 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
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