参数资料
型号: HAT1126R
厂商: Renesas Technology Corp.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速电源开关
文件页数: 2/8页
文件大小: 121K
代理商: HAT1126R
HAT1126R, HAT1126RJ
Rev.1.00 Sep. 10, 2004, page 2 of 7
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
V
(BR)DSS
Min
–60
Typ
Max
Unit
V
Unit
Drain to source breakdown
voltage
Gate to Source breakdown voltage V
(BR)GSS
Zero gate voltage drain current
HAT1126R
Zero gate voltage
drain current
HAT1126RJ
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Notes: 5. Pulse test
I
D
= –10 mA, V
GS
= 0
±
20
–1.0
4.0
7.0
40
60
2300
230
140
37
6.5
8
20
15
55
10
–0.85
–1
–10
±
10
–2.5
50
85
–1.1
V
μ
A
μ
A
μ
A
μ
A
V
S
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
DS
= –48 V, V
GS
= 0
Ta = 125
°
C
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –3.0 A
Note5
, V
DS
= –10 V
I
D
= –3.0 A
Note5
, V
GS
= –10 V
I
D
= –3.0 A
Note5
, V
GS
= –4.5 V
V
DS
= –10 V, V
GS
= 0
f = 1 MHz
I
DSS
I
DSS
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
V
DF
V
DD
= –25 V
V
GS
= –10 V
I
D
= –6.0 A
V
GS
= –10 V, I
D
= –3.0 A
V
DD
–30 V
R
L
= 10
R
G
= 4.7
I
F
= –6.0 A, V
GS
= 0
Note5
I
F
= –6.0 A, V
GS
= 0
diF/dt = 100 A /
μ
s
trr
30
ns
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