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参数资料
| 型号： | HAT1126R |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道功率MOS FET的高速电源开关 |
| 文件页数： | 3/8页 |
| 文件大小： | 121K |
| 代理商： | HAT1126R |
HAT1126R, HAT1126RJ
Rev.1.00 Sep. 10, 2004, page 3 of 7
Main Characteristics
4.0
3.0
2.0
1.0
0
50
100
150
200
Power vs. Temperature Derating
Typical Transfer Characteristics
Typical Output Characteristics
2DieOpeaion
1DrveOperaion
Note 6:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
C
D
D
D
D
Ambient Temperature Ta (
°
C)
Gate to Source Voltage V
GS
(V)
Drain to Source Voltage V
DS
(V)
–10
–8
–6
–4
–2
0
–1
–2
–3
–4
–5
–3 V
V
GS
= –2.5 V
Pulse Test
–10
–8
–6
–4
–2
0
–1
–2
–3
–4
–5
Tc = 75
°
C
25
°
C
25
°
C
V
DS
= –10 V
Pulse Test
–0.01
–10
–1
–0.1
–0.01
–0.1
–1
–10
Maximum Safe Operation Area
–100
–100
100
μ
s
1ms
10
μ
s
PW=10ms
Noe6
DCOpeaion(PW<10s
limited by R
DS(on)
Drain to Source Voltage V
DS
(V)
D
D
–4 V
–10 V
Static Drain to Source on State Resistance
vs. Drain Current
1000
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
(
)
D
D
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
–400
–300
–200
–100
0
–5
–10
–15
–20
–3 A
–1 A
I
D
= –5 A
–1
–10
–100
–3
–30
200
500
100
20
10
50
V
GS
= –4.5 V
–10 V
Pulse Test
Pulse Test
Ta = 25
°
C
1 shot Pulse
Operation in
this area is
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW
≤
10s)
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| HAT1126R-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R |
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