参数资料
型号: HAT1126RJ-EL-E
厂商: Renesas Technology Corp.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速电源开关
文件页数: 1/8页
文件大小: 121K
代理商: HAT1126RJ-EL-E
Rev.1.00 Sep. 10, 2004 page 1 of 7
HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
REJ03G0406-0100
Rev.1.00
Sep.10.2004
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
1234
5
6
7
8
G
D
S
D
G
D
S
D
MOS1
MOS2
1
2
7 8
4
5 6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25
°
C)
Ratings
Item
Symbol
HAT1126R
–60
±
20
–6.0
–48
2
3
150
–55 to +150
HAT1126RJ
–60
±
20
–6.0
–48
–6.0
3.08
2
3
150
–55 to +150
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
10
μ
s, duty cycle
1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s
4. Value at Tch = 25
°
C, Rg
50
V
DSS
V
GSS
I
D
V
V
A
A
A
mJ
W
W
°
C
°
C
I
D
(pulse)
Note1
I
AP
E
AR
Pch
Note2
Pch
Note3
Tch
Tstg
Note4
Note4
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