- 您现在的位置：买卖IC网 > PDF目录385378 > HGTG40N60A4 (INTERSIL CORP) 600V, SMPS Series N-Channel IGBTs(600V, SMPS系列N沟道绝缘栅双极型晶体管) PDF资料下载
参数资料
| 型号： | HGTG40N60A4 |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBTs(600V, SMPS系列N沟道绝缘栅双极型晶体管) |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 1/8页 |
| 文件大小： | 93K |
| 代理商： | HGTG40N60A4 |
4-1
TM
File Number
4782.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
HGTG40N60A4
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between 25
o
C and 150
o
C. This IGBT
is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49347.
Symbol
Features
100kHz Operation At 390V, 40A
200kHz Operation At 390V, 20A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at T
J
= 125
o
Low Conduction Loss
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG40N60A4
TO-247
40N60A4
NOTE: When ordering, use the entire part number.
C
E
G
COLLECTOR
(FLANGE)
C
E
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
April 2000
相关PDF资料 |
PDF描述 |
|---|---|
| HGTG40N60B3 | 70A, 600V, UFS Series N-Channel IGBT(70A, 600V，N沟道绝缘栅双极晶体管) |
| HI-1567CDI | 5V MONOLITHIC DUAL TRANSCEIVERS |
| HI-1567CDIM | 5V MONOLITHIC DUAL TRANSCEIVERS |
| HI-1567CDIT | 5V MONOLITHIC DUAL TRANSCEIVERS |
| HI-1567PCI | 5V MONOLITHIC DUAL TRANSCEIVERS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG40N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG40N60B3 | 功能描述:IGBT 晶体管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG40N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG40N60B3_Q | 功能描述:IGBT 晶体管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。