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| 型号： | HUFA75545P3 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET |
| 中文描述： | 75 A, 80 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 1/10页 |
| 文件大小： | 231K |
| 代理商： | HUFA75545P3 |
2001 Fairchild Semiconductor Corporation
HUFA75545P3, HUFA75545S3S Rev. B
HUFA75545P3, HUFA75545S3S
75A, 80V, 0.010 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC TO-220AB
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.010
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchild.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURDRAIN
HUFA75545P3
GATE
SOURCE
DRAIN
(FLANGE)
HUFA75545S3S
D
G
S
PART NUMBER
PACKAGE
BRAND
HUFA75545P3
TO-220AB
75545P
HUFA75545S3S
TO-263AB
75545S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75545S3ST.
HUFA75545P3, HUFA75545S3S
80
80
±
20
UNITS
V
V
V
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (T
C
= 25
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (T
C
= 100
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
1. T
J
= 25
C to 150
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DSS
DGR
GS
o
D
D
o
DM
75
73
Figure 4
Figure 6
270
1.8
-55 to 175
A
A
D
o
W
W/
o
C
J
, T
STG
o
C
L
pkg
300
260
o
o
C
C
o
o
Data Sheet
December 2001
相关PDF资料 |
PDF描述 |
|---|---|
| HUFA75545S3S | 2W ISOLATED DUAL OUTPUT CONVERTER RoHS Compliant: Yes |
| HUFA75617D3 | 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUFA75617D3S | 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUFA75617D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-252AA |
| HUFA75623P3 | 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HUFA75545S3S | 功能描述:MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75545S3ST | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB |
| HUFA75617D3 | 功能描述:MOSFET 16a 100V N-Ch 0.090Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75617D3S | 功能描述:MOSFET 16a 100V N-Ch 0.090Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75617D3ST | 功能描述:MOSFET 16a 100V N-Ch 0.090Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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