参数资料
型号: HY29F800ATG-90
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
中文描述: 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
封装: PLASTIC, SOP-44
文件页数: 17/40页
文件大小: 279K
代理商: HY29F800ATG-90
17
Rev. 1.1/Feb 02
HY29F800A
DQ[6] to toggle. DQ[6] stops toggling when the
erase operation is complete or when the device is
placed in the Erase Suspend mode. The host may
use DQ[2] to determine which sectors are erasing
or erase-suspended (see below). After an Erase
command sequence is written, if all sectors se-
lected for erasing are protected, DQ[6] toggles for
approximately 100 μs, then returns to reading ar-
ray data. If at least one selected sector is not pro-
tected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sec-
tors that are protected.
DQ[2] - Toggle Bit II
Toggle Bit II, DQ[2], when used with DQ[6], indi-
cates whether a particular sector is actively eras-
ing or whether that sector is erase-suspended.
Toggle Bit II is valid after the rising edge of the
final WE# pulse in the command sequence. The
device toggles DQ[2] with each OE# or CE# read
cycle.
DQ[2] toggles when the host reads at addresses
within sectors that have been selected for erasure,
but cannot distinguish whether the sector is ac-
tively erasing or is erase-suspended. DQ[6], by
comparison, indicates whether the device is ac-
tively erasing or is in Erase Suspend, but cannot
distinguish which sectors are selected for erasure.
Thus, both status bits are required for sector and
mode information.
Figure 8 illustrates the operation of Toggle Bits I
and II.
DQ[5] - Exceeded Timing Limits
DQ[5] is set to a
1
when the program or erase
time has exceeded a specified internal pulse count
limit. This is a failure condition that indicates that
the program or erase cycle was not successfully
completed. DQ[5] status is valid only while DQ[7]
or DQ[6] indicate that the Automatic Algorithm is
in progress.
The DQ[5] failure condition will also be signaled if
the host tries to program a
1
to a location that is
previously programmed to
0
, since only an erase
operation can change a
0
to a
1
.
For both of these conditions, the host must issue
a Read/Reset command to return the device to
the Read mode.
DQ[3] - Sector Erase Timer
After writing a Sector Erase command sequence,
the host may read DQ[3] to determine whether or
not an erase operation has begun. When the
sector erase time-out expires and the sector erase
operation commences, DQ[3] switches from a
0
to a
1
. Refer to the
Sector Erase Command
section for additional information. Note that the
sector erase timer does not apply to the Chip Erase
command.
After the initial Sector Erase command sequence
is issued, the system should read the status on
DQ[7] (Data# Polling) or DQ[6] (Toggle Bit I) to
ensure that the device has accepted the command
sequence, and then read DQ[3]. If DQ[3] is a
1
,
the internally controlled erase cycle has begun and
START
Read DQ[7:0]
at Valid Address (Note 1)
DQ[7] = Data
NO
YES
PROGRAM/ERASE
COMPLETE
DQ[5] = 1
NO
YES
Test for DQ[7] = 1
for Erase Operation
Read DQ[7:0]
at Valid Address (Note 1)
DQ[7] = Data
(Note 2)
NO
YES
Test for DQ[7] = 1
for Erase Operation
PROGRAM/ERASE
EXCEEDED TIME ERROR
Notes:
1. During programming, the program address.
During sector erase, an address within any non-protected sector
scheduled for erasure.
During chip erase, an address within any non-protected sector.
2. Recheck DQ[7] since it may change asynchronously at the same time
as DQ[5].
Figure 7. Data# Polling Test Algorithm
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HY29F800ATG-90I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-55 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-55I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory