- 您现在的位置：买卖IC网 > PDF目录384464 > HY29F800ATG-90 (HYNIX SEMICONDUCTOR INC) 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory PDF资料下载
参数资料
| 型号： | HY29F800ATG-90 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| 中文描述： | 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 |
| 封装： | PLASTIC, SOP-44 |
| 文件页数： | 19/40页 |
| 文件大小： | 279K |
| 代理商： | HY29F800ATG-90 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页当前第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页
19
Rev. 1.1/Feb 02
HY29F800A
HARDWARE DATA PROTECTION
The HY29F800A provides several methods of pro-
tection to prevent accidental erasure or program-
ming which might otherwise be caused by spuri-
ous system level signals during V
CC
power-up and
power-down transitions, or from system noise.
These methods are described in the sections that
follow.
Command Sequences
Commands that may alter array data require a
sequence of cycles as described in Table 5. This
provides data protection against inadvertent writes.
Low V
CC
Write Inhibit
To protect data during V
CC
power-up and power-
down, the device does not accept write cycles
when V
is less than V
(typically 3.7 volts). The
command register and all internal program/erase
circuits are disabled, and the device resets to the
Read mode. Writes are ignored until V
CC
is greater
than V
LKO
. The system must provide the proper
signals to the control pins to prevent unintentional
writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#,
CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by asserting any one of
the following conditions: OE# = V
IL
, CE# = V
IH
, or
WE# = V
IH
. To initiate a write cycle, CE# and WE#
must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power
up, the device does not accept commands on the
rising edge of WE#. The internal state machine is
automatically reset to the Read mode on power-
up.
Sector Protection
Additional data protection is provided by the
HY29F800A
’
s sector protect feature, described
previously, which can be used to protect sensitive
areas of the Flash array from accidental or unau-
thorized attempts to alter the data.
相关PDF资料 |
PDF描述 |
|---|---|
| HY29F800ATG-90I | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-12 | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-12I | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29LV320TF-90 | 32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BF-12 | Dust Cover; For Use With:Anderson Power SB350 Series Connectors; Color:Red |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY29F800ATG-90I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-12 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-12I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-55 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-55I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
发布紧急采购，3分钟左右您将得到回复。