参数资料
型号: HY29F800ATG-90
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
中文描述: 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
封装: PLASTIC, SOP-44
文件页数: 21/40页
文件大小: 279K
代理商: HY29F800ATG-90
21
Rev. 1.1/Feb 02
HY29F800A
DC CHARACTERISTICS
TTL/NMOS Compatible
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Notes:
1. The I
current is listed is typically less than 2 mA/MHz with OE# at V
IH
.
2. Maximum I
specifications are tested with V
= V
Max.
3. I
active while the Automatic Erase or Automatic Program algorithm is in progress.
4. Not 100% tested.
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HY29F800ATG-90I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-55 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-55I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory