参数资料
型号: HY29LV320TF-90
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 32 Mbit (2M x 16) Low Voltage Flash Memory
中文描述: 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
封装: 7 X 11 MM, FBGA-63
文件页数: 1/44页
文件大小: 323K
代理商: HY29LV320TF-90
KEY FEATURES
Single Power Supply Operation
– Read, program and erase operations from
2.7 to 3.6 volts
– Ideal for battery-powered applications
High Performance
– 70, 80, 90 and 120 ns access time
versions for full voltage range operation
Ultra-low Power Consumption (Typical/
Maximum Values)
– Automatic sleep/standby current: 0.5/5.0
μA
– Read current: 9/16 mA (@ 5 MHz)
– Program/erase current: 20/30 mA
Top and Bottom Boot Block Versions
– Provide one 8 KW, two 4 KW, one 16 KW
and sixty-three 32 KW sectors
Secured Sector
– An extra 128-word, factory-lockable
sector available for an Electronic Serial
Number and/or additional secured data
Sector Protection
– Allows locking of a sector or sectors to
prevent program or erase operations
within that sector
– Temporary Sector Unprotect allows
changes in locked sectors
Fast Program and Erase Times (typicals)
– Sector erase time: 0.5 sec per sector
– Chip erase time: 32 sec
– Word program time: 11
μ
s
– Accelerated program time per word: 7
μ
s
Automatic Erase Algorithm Preprograms
and Erases Any Combination of Sectors
or the Entire Chip
Automatic Program Algorithm Writes and
Verifies Data at Specified Addresses
Compliant With Common Flash Memory
Interface (CFI) Specification
– Flash device parameters stored directly
on the device
– Allows software driver to identify and use a
variety of current and future Flash products
Minimum 100,000 Write Cycles per Sector
Revision 1.3, May 2002
A[20:0]
21
CE#
OE#
WE#
16
DQ[15:0]
RESET#
RY/BY#
WP#/ACC
LOGIC DIAGRAM
Compatible With JEDEC standards
Pinout and software compatible with
single-power supply Flash devices
Superior inadvertent write protection
Data# Polling and Toggle Bits
Provide software confirmation of
completion of program and erase
operations
Ready/Busy (RY/BY#) Pin
Provides hardware confirmation of
completion of program and erase
operations
Write Protect Function (WP#/ACC pin)
Allows hardware protection of the first or
last 32 KW of the array, regardless of sector
protect status
Acceleration Function (WP#/ACC pin)
Provides accelerated program times
Erase Suspend/Erase Resume
Suspends an erase operation to allow
reading data from, or programming data
to, a sector that is not being erased
Erase Resume can then be invoked to
complete suspended erasure
Hardware Reset Pin (RESET#) Resets the
Device to Reading Array Data
Space Efficient Packaging
48-pin TSOP and 63-ball FBGA packages
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
相关PDF资料
PDF描述
HY29LV320BF-12 Dust Cover; For Use With:Anderson Power SB350 Series Connectors; Color:Red
HY29LV320BF-12I 32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TT-90 32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320BT-90 32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TF-70 32 Mbit (2M x 16) Low Voltage Flash Memory
相关代理商/技术参数
参数描述
HY29LV320TF-90I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TT-12 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TT-12I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TT-70 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320TT-70I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory