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参数资料
型号： MPTE-8C
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-201AD
文件页数： 1/2页
文件大小： 153K
代理商： MPTE-8C
1.016±0.050
25.4 min
5.080
+0.127
-0.254
9.400
+0.127
-0.254
All Dimensions in mm
ICTE/MPTE series
ICTE/MPTE SERIES (1500 WATT) AXIAL TRANSIENT VOLTAGE SUPPRESSORS
The ICTE/MPTE series 1500 W transient suppressors are designed specifically for protection of
CMOS, NMOS, BiMOS, and other intergrated circuits available today for TTL, DTL, ECL, RTL,
and linear functions. This series offers the lowest clamping voltages.
FEATURES
Stand-off voltage Range 5 to 45 Volts
Glass Passivated Junction
Very low clamping voltages
Uni-directional and Bi-directional
100% Surge tested
MAXIMUM RATING
Peak Pulse Power (Ppk): 1500 Watts (10 X 1000s)
(see diagram on page 6 for wave form)
5 Watt Steady State
Response time: 1 X 10-12 seconds (theoretical)
Forward surge rating: 200 Amps, 8.3ms half sine wave, (uni-directional devices only)
Operating & storage temperature: -55°C to +150°C
MECHANICAL CHARACTERISTICS
Case: DO-201AD; moulded plastic over glass passivated junction
Terminals: Axial leads, solderable per MIL-STD-202 Method 208
Solderable leads = 230°C for 10 seconds (1.59mm from case)
Marking: cathode band (positive terminal, uni-directional devices only), device code, logo
Weight: 1.5 grammes (approx)
contact semitron on: telephone: +44 (0)1793 724000 fax: +44 (0)1793 720401
28
All products are sold to the commercial specifications shown, for any additional reliability testing or extended parameters, please consult the factory.
ELECTRICAL CHARACTERISTICS @ Tamb 25°C
REVERSE
MINIMUM
MAXIMUM
PART
STANDOFF
BREAKDOWN
REVERSE
CLAMPING
PEAK
NUMBER
VOLTAGE
LEAKAGE
VOLTAGE
PULSE
Vr
Vbr @ 1mA
Ir @Vr
Vc @ Ipp1=1A
Vc @Ipp2=10A
CURRENT
(Volts)
(A)
(Volts)
Ipp (A)
ICTE-5/MPTE-5
*
5.0
6.0
300.0
7.1
7.5
160.0
ICTE-8/MPTE-8*
8.0
9.4
25.0
11.3
11.5
100.0
ICTE-10/MPTE-10
10.0
11.7
2.0
13.7
14.1
90.0
ICTE-12/MPTE-12
12.0
14.1
2.0
16.1
16.5
70.0
ICTE-15/MPTE-15
15.0
17.6
2.0
20.1
20.6
60.0
ICTE-18/MPTE-18*
18.0
21.2
2.0
24.2
25.2
50.0
ICTE-22/MPTE-22
22.0
25.9
2.0
29.8
32.0
40.0
ICTE-36/MPTE-36
36.0
42.4
2.0
50.6
54.3
23.0
ICTE-45/MPTE-45
45.0
52.9
2.0
63.3
70.0
19.0
VF max = 3.5 Volts max at IF = 50A 300 S square wave pulse
ICTE-8C/MPTE-8C
8.0
9.4
50.0
11.4
11.6
100.0
ICTE-10C/MPTE-10C
10.0
11.7
2.0
14.1
14.5
90.0
ICTE-12C/MPTE-12C
12.0
14.1
2.0
16.7
17.1
70.0
ICTE-15C/MPTE-15C
15.0
17.6
2.0
20.8
21.4
60.0
ICTE-18C/MPTE-18C
18.0
21.2
2.0
24.8
25.5
50.0
ICTE-22C/MPTE-22C
22.0
25.9
2.0
30.8
32.0
40.0
ICTE-36C/MPTE-36C
36.0
42.4
2.0
50.6
54.3
23.0
ICTE-45C/MPTE-45C
45.0
52.9
2.0
63.3
70.0
19.0
ICTE-5 is not available in Bi-directional.
Suffix `C’ denotes Bi-directional device.
* Prefered voltages.
相关PDF资料
PDF描述
MPTE-45 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AD
MQ1N6509 UNIDIRECTIONAL, 16 ELEMENT, SILICON, TVS DIODE
MV1N6509 UNIDIRECTIONAL, 16 ELEMENT, SILICON, TVS DIODE
MR1003 1 A, SILICON, SIGNAL DIODE, DO-41
MR1005 1 A, SILICON, SIGNAL DIODE, DO-41
相关代理商/技术参数
参数描述
ICTE8-E3/1 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 8.0V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
ICTE8-E3/4 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
ICTE8-E3/51 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
ICTE8-E3/54 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
ICTE8-E3/73 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 8.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
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