参数资料
型号: IP4364CX8
厂商: NXP Semiconductors N.V.
元件分类: 电路保护
英文描述: Integrated SIM card passive filter array with ESD protection to IEC 61000-4-2 level 4
封装: IP4064CX8/LF/P<NAX000|<<<1<Always Pb-free,;IP4064CX8/LF<NAX000|<<<1<Always Pb-free,;IP4064CX8/LF/S<NAX000|<<<1<Always Pb-free,;IP4364CX8/LF<NAX000|<&
文件页数: 3/14页
文件大小: 267K
代理商: IP4364CX8
IP4064CX8_IP4364CX8_IP4366CX8_2
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 11 February 2010
3 of 14
NXP Semiconductors
IP4064CX8; IP4364CX8; IP4366CX8
Integrated SIM card passive filter array with ESD protection
4. Functional diagram
5. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
I
input voltage
V
ESD
electrostatic discharge
voltage
[1]
Device is qualified with 1000 pulses of
±
15 kV contact discharges each, according to the IEC61000-4-2
model and far exceeds the specified level 4 (8 kV contact discharge).
Fig 2.
Schematic diagram
008aaa210
100
Ω
R1
47
Ω
R2
100
Ω
R3
A3
B3
C3
IEC61000-4-2
level 1
protection pins
IEC61000-4-2
level 4
protection pins
A2
C2
B1
C1
B2
Limiting values
Conditions
Min
0.5
Max
+5.5
Unit
V
pins A2, B1, C1 and C2
to ground
contact discharge
air discharge
IEC 61000-4-2 level 4;
pins A2, B1, C1 and C2
to ground
contact discharge
air discharge
IEC 61000-4-2 level 1;
pins A3, B3 and C3 to
ground
contact discharge
air discharge
continuous power;
T
amb
= 70
°
C
continuous power;
T
amb
= 70
°
C
[1]
15
+15
+15
kV
kV
[1]
15
8
15
+8
+15
kV
kV
2
2
-
+2
+2
60
kV
kV
mW
P
ch
channel power dissipation
P
tot
total power dissipation
-
180
mW
T
stg
T
reflow(peak)
T
amb
storage temperature
peak reflow temperature
ambient temperature
55
-
35
+150
260
+85
°
C
°
C
°
C
10 s maximum
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