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参数资料
| 型号： | IRF5210SPBF |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 707K |
| 代理商： | IRF5210SPBF |
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from
IRF5210S/L
P-Channel
Lead-Free
S
D
G
www.irf.com
1
Absolute Maximum Ratings
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
W/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady state)
170
1.3
± 20
120
-23
0.017
-7.4
300 (1.6mm from case )
-55 to + 150
Max.
-38
-24
-140
3.1
D
2
Pak
IRF5210SPbF
TO-262
IRF5210LPbF
S
D
G
D
S
D
G
D
G
D
S
Gate
Drain
Source
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF5210STRL | 制造商:International Rectifier 功能描述:MOSFET Transistor, P-Channel, TO-263AB |
| IRF5210STRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 40A 3PIN D2PAK - Tape and Reel |
| IRF5210STRLPBF | 功能描述:MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF5210STRLPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 100 V 200 W 180 nC Hexfet Power Mosfet Surface Mount - D2PAK-3 |
| IRF5210STRR | 功能描述:MOSFET P-CH 100V 40A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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