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参数资料
| 型号： | IRF5803D2PBF |
| 厂商： | International Rectifier |
| 英文描述： | FETKY ㈢MOSFET & Schottky Diode |
| 中文描述： | FETKY㈢MOSFET的 |
| 文件页数： | 1/11页 |
| 文件大小： | 154K |
| 代理商： | IRF5803D2PBF |
Parameter
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum
-3.4
-2.7
-27
2.0
1.3
16
± 20
-55 to +150
Units
A
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
W
mW/°C
V
°C
V
GS
T
J,
T
STG
Co-packaged HEXFET
Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low V
F
Schottky Rectifier
SO-8 Footprint
Lead-Free
IRF5803D2PbF
FETKY
MOSFET & Schottky Diode
Absolute Maximum Ratings
(T
A
= 25°C Unless Otherwise Noted)
Description
The
FETKY
TM
family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
V
DSS
= -40V
R
DS(on)
= 112m
Schottky Vf = 0.51V
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
Pulse width
≤
400μs – duty cycle
≤
2%
Surface mounted on 1 inch square copper board, t
≤
10sec.
SO-8
Symbol
R
θ
JL
R
θ
JA
R
θ
JA
Parameter
Typ.
–––
–––
–––
Max.
20
62.5
62.5
Units
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient
Junction-to-Ambient
, MOSFET
, SCHOTTKY
°C/W
Thermal Resistance
www.irf.com
1
PD- 95160A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF5803D2TR | 功能描述:MOSFET P-CH 40V 3.4A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:FETKY™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF5803D2TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 40V 3.4A 8-Pin SOIC T/R |
| IRF5803D2TRPBF | 功能描述:MOSFET MOSFT PCh w/Schttky -3.4A 112mOhm 25nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF5803PBF | 制造商:International Rectifier 功能描述:MOSFET P-Channel 40V 3.4A TSOP6 |
| IRF5803TR | 功能描述:MOSFET P-CH 40V 3.4A 6-TSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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