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参数资料
| 型号： | IRFU110A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 4.7 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | IPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 255K |
| 代理商： | IRFU110A |
N-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25 unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/ T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
V
nA
A
μ
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250 A
I
D
=250 A
See Fig 7
V
DS
=5V,I
D
=250 A
V
GS
=20V
V
GS
=-20V
V
DS
=100V
V
DS
=80V,T
C
=125
V
GS
=10V,I
D
=2.35A
V
DS
=40V,I
D
=2.35A
V
DD
=50V,I
D
=5.6A,
R
G
=24
See Fig 13
V
DS
=80V,V
GS
=10V,
I
D
=5.6A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
C
μ
Integral reverse pn-diode
in the MOSFET
T
J
=25 ,I
S
=4.7A,V
GS
=0V
T
J
=25 ,I
F
=5.6A
di
F
/dt=100A/ s
Ο
C
O
4
O
5
Ο
C
Ο
C
O
4
O
4
O
4
O
4
O
1
Ο
C
Ο
C
O
5
O
4
IRFR/U110A
100
--
2.0
--
--
--
--
--
0.12
--
--
--
--
--
55
21
10
14
28
18
8.5
1.6
4.1
--
--
4.0
100
-100
10
100
0.4
--
240
65
25
30
40
70
50
12
--
--
3.23
190
--
--
--
85
0.23
4.7
19
1.5
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=4mH, I
AS
=4.7A, V
DD
=25V, R
G
=27
I
SD
5.6A, di/dt 250A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
, Starting T
J
=25
O
1
O
O
3
O
2
4
o
C
o
C
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相关代理商/技术参数 |
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|---|---|
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