参数资料
型号: IXFV18N60P
厂商: IXYS
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH 600V 18A PLUS220
产品目录绘图: PLUS220 Package
标准包装: 50
系列: PolarHV™ HiPerFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 18A
开态Rds(最大)@ Id, Vgs @ 25° C: 400 毫欧 @ 500mA,10V
Id 时的 Vgs(th)(最大): 5.5V @ 2.5mA
闸电荷(Qg) @ Vgs: 50nC @ 10V
输入电容 (Ciss) @ Vds: 2500pF @ 25V
功率 - 最大: 360W
安装类型: 通孔
封装/外壳: TO-220-3(SMT)标片
供应商设备封装: PLUS220
包装: 管件
PolarHV TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
IXFH 18N60P
IXFV 18N60P
IXFV 18N60PS
V DSS
I D25
R DS(on)
t rr
=
=
600 V
18 A
400 m Ω
200 ns
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M Ω
Continuous
600
600
± 30
V
V
V
V GSM
I D25
I DM
I AR
E AR
E AS
Tranisent
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
± 40
18
45
18
30
1.0
V
A
A
A
mJ
J
PLUS220 (IXFV)
D (TAB)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 5 Ω
10
V/ns
G
D
S
D (TAB)
P D
T C = 25 ° C
360
W
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
PLUS220SMD (IXFV...S)
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
° C
° C
M d
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
G
S
D (TAB)
Weight
TO-247
PLUS220 & PLUS220SMD
6
4
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Features
BV DSS
V GS = 0 V, I D = 250 μ A
600
V
l
l
International standard packages
Unclamped Inductive Switching (UIS)
V GS(th)
V DS = V GS , I D = 2.5 mA
3.0
5.5
V
rated
I GSS
V GS = ± 30 V, V DS = 0 V
± 100
nA
l
Low package inductance
- easy to drive and to protect
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
250
μ A
μ A
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
400
m Ω
l
l
Easy to mount
Space savings
? 2006 IXYS All rights reserved
l
High power density
DS99390E(03/06)
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