参数资料
型号: IXFV20N80PS
厂商: IXYS
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH 800V 20A PLUS220SMD
标准包装: 50
系列: PolarHV™ HiPerFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 800V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 520 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 5V @ 4mA
闸电荷(Qg) @ Vgs: 86nC @ 10V
输入电容 (Ciss) @ Vds: 4685pF @ 25V
功率 - 最大: 500W
安装类型: 表面贴装
封装/外壳: PLUS-220SMD
供应商设备封装: PLUS-220SMD
包装: 管件
PolarHV TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFH
IXFT
IXFV
IXFV
20N80P
20N80P
20N80P
20N80PS
V DSS
I D25
R DS(on)
t rr
= 800 V
= 20 A
≤ 520 m ?
≤ 250 ns
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXFH)
V DSS
T J = 25 ° C to 150 ° C
800
V
V DGR
V GSS
V GSM
I D25
I DM
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
800
± 30
± 40
20
50
V
V
V
A
A
TO-268 (IXFT)
(TAB)
I AR
E AR
T C = 25 ° C
T C = 25 ° C
10
30
A
mJ
G
S
D (TAB)
E AS
T C = 25 ° C
1.0
J
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
10
V/ns
PLUS220 (IXFV)
T J ≤ 150 ° C, R G = 4 ?
P D
T C = 25 ° C
500
W
S
T J
T JM
T stg
T L
T SOLD
Maximum lead temperature for soldering
Plastic case for 10 s
-55 ... +150
150
-55 ... +150
300
260
° C
° C
° C
° C
° C
G
D
PLUS220 SMD(IXFV..S)
D (TAB)
M d
Mounting torque (TO-247)
1.13/10 Nm/lb.in.
F C
Weight
Mounting force (PLUS220)
TO-247
1..65 / 2.5..15
6
N/lb
g
G
S
D (TAB)
TO-268
5.5
g
PLUS220 types
4
g
G = Gate
D = Drain
S = Source
Features
Tab = Drain
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
l
l
International standard packages
Fast recovery diode
BV DSS
V GS = 0 V, I D = 250 μ A
800
V
l
Unclamped Inductive Switching (UIS)
rated
V GS(th)
I GSS
V DS = V GS , I D = 4 mA
V GS = ± 30 V DC , V DS = 0
3.0
5.0
± 200
V
nA
l
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V T J = 125 ° C
V GS = 10 V, I D = 10 A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
25
1000
520
μ A
μ A
m ?
Advantages
l
l
l
DS99511E(03/06)
? 2006 IXYS All rights reserved
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