参数资料
型号: JANS2N3996
英文描述: TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111
中文描述: 晶体管|晶体管|叩| 80V的五(巴西)总裁| 5A条一(c)|至111
文件页数: 8/20页
文件大小: 128K
代理商: JANS2N3996
MIL-PRF-19500/560E
16
* TABLE II. Group E inspection (all quality levels) – for qualification only.
Inspection
MIL-STD-750
Qualification
Method
Conditions
Subgroup 1
Temperature cycling
(air to air)
1051
Test condition C, 500 cycles
45 devices
c = 0
Hermetic seal
Fine leak
Gross leak
1071
Electrical measurements
See group A, subgroup 2 and table III herein.
Subgroup 2
Intermittent life
1037
VCB = 10 V dc, 6,000 cycles.
45 devices
c = 0
Electrical measurements
See group A, subgroup 2 and table III herein.
Subgroups 3, 4, 5, 6 and
7
Not applicable
Subgroup 8
Reverse stability
1033
Condition A for devices
≥ 400 V
Condition B for devices
< 400 V
45 devices
c = 0
相关PDF资料
PDF描述
JANS2N3997 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111
JANS2N3998 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA
JANS2N3999 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA
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