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参数资料
| 型号： | K6F8016T6C |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 为512k x16位超低功耗和低电压的CMOS静态RAM全 |
| 文件页数： | 3/9页 |
| 文件大小： | 173K |
| 代理商： | K6F8016T6C |
K6F8016T6C Family
Revision 0.0
July 2003
3
CMOS SRAM
Preliminary
PRODUCT LIST
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
K6F8016T6C-FF55
K6F8016T6C-FF70
48-FBGA, 55ns, 3.0V/3.3V
48-FBGA, 70ns, 3.0V/3.3V
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions over 1 second may affect reliability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.3 to V
CC
+0.3V(Max. 4.2V)
V
Voltage on Vcc supply relative to Vss
V
CC
-0.3 to 4.2
V
Power Dissipation
P
D
1.0
W
Storage temperature
T
STG
-65 to 150
°
C
°
C
Operating Temperature
T
A
-40 to 85
FUNCTIONAL DESCRIPTION
1. X means don
′
t care. (Must be low or high state)
CS
1
CS
2
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
L
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
X
1)
X
1)
X
1)
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
H
L
X
1)
High-Z
High-Z
Output Disabled
Active
L
H
H
H
X
1)
L
High-Z
High-Z
Output Disabled
Active
L
H
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
H
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
Word Read
Active
L
H
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
H
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
H
X
1)
L
L
L
Din
Din
Word Write
Active
相关PDF资料 |
PDF描述 |
|---|---|
| K6F8016T6C-FF55 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016T6C-FF70 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6D | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6D-FF55 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6D-FF70 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K6F8016T6C-FF55 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016T6C-FF70 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6A-EF70 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 512Kx16, 48 Pin, Plastic, BGA |
| K6F8016U6D | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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