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参数资料
| 型号： | K6F8016T6C |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 为512k x16位超低功耗和低电压的CMOS静态RAM全 |
| 文件页数： | 5/9页 |
| 文件大小： | 173K |
| 代理商： | K6F8016T6C |
K6F8016T6C Family
Revision 0.0
July 2003
5
CMOS SRAM
Preliminary
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load(see right): C
L
=100pF+1TTL
C
L
=30pF+1TTL
DATA RETENTION CHARACTERISTICS
1.
1) CS
1
≥
Vcc-0.2V, CS
2
≥
Vcc-0.2V(CS
1
controlled) or
2) 0
≤
CS
2
≤
0.2V(CS
2
controlled)
2. Typical values are measured at T
A
=25
°
C and not 100% tested.
Item
Symbol
Test Condition
Min
Typ
2)
Max
Unit
Vcc for data retention
V
DR
CS
1
≥
Vcc-0.2V
1)
Vcc=1.5V, CS
1
≥
Vcc-0.2V
1)
1.5
-
3.6
V
Data retention current
I
DR
-
1.0
6
μ
A
Data retention set-up time
t
SDR
See data retention waveform
0
-
-
ns
Recovery time
t
RDR
tRC
-
-
AC CHARACTERISTICS
(Vcc=2.7~3.3V, Industrial product: T
A
=-40 to 85
°
C)
Parameter List
Symbol
Speed Bins
Units
55ns
70ns
Min
Max
Min
Max
Read
Read Cycle Time
t
RC
55
-
70
-
ns
Address Access Time
t
AA
-
55
-
70
ns
Chip Select to Output
t
CO
-
55
-
70
ns
Output Enable to Valid Output
t
OE
-
25
-
35
ns
UB, LB Access Time
t
BA
-
55
-
70
ns
Chip Select to Low-Z Output
t
LZ
10
-
10
-
ns
UB, LB Enable to Low-Z Output
t
BLZ
10
-
10
-
ns
Output Enable to Low-Z Output
t
OLZ
5
-
5
-
ns
Chip Disable to High-Z Output
t
HZ
0
20
0
25
ns
UB, LB Disable to High-Z Output
t
BHZ
0
20
0
25
ns
Output Disable to High-Z Output
t
OHZ
0
20
0
25
ns
Output Hold from Address Change
t
OH
10
-
10
-
ns
Write
Write Cycle Time
t
WC
55
-
70
-
ns
Chip Select to End of Write
t
CW
45
-
60
-
ns
Address Set-up Time
t
AS
0
-
0
-
ns
Address Valid to End of Write
t
AW
45
-
60
-
ns
UB, LB Valid to End of Write
t
BW
45
-
60
-
ns
Write Pulse Width
t
WP
40
-
50
-
ns
Write Recovery Time
t
WR
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
20
0
20
ns
Data to Write Time Overlap
t
DW
25
-
30
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
ns
End Write to Output Low-Z
t
OW
5
-
5
-
ns
C
L
1)
1. Including scope and jig capacitance
2. R
1
=3070
,
R
2
=3150
3. V
TM
=2.8V
R
2
2)
R
1
2)
V
TM
3)
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相关代理商/技术参数 |
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|---|---|
| K6F8016T6C-FF55 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016T6C-FF70 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6A-EF70 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 512Kx16, 48 Pin, Plastic, BGA |
| K6F8016U6D | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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