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参数资料
| 型号： | K6F8016T6C |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 为512k x16位超低功耗和低电压的CMOS静态RAM全 |
| 文件页数： | 7/9页 |
| 文件大小： | 173K |
| 代理商： | K6F8016T6C |
K6F8016T6C Family
Revision 0.0
July 2003
7
CMOS SRAM
Preliminary
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
t
WC
t
CW(2)
t
AW
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AS(3)
CS
1
CS
2
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
1
Data Undefined
UB, LB
WE
Data in
Data out
t
WC
t
CW(2)
t
WR(4)
t
AW
t
BW
t
WP(1)
t
AS(3)
t
DH
t
DW
t
WHZ
t
OW
High-Z
High-Z
Data Valid
CS
2
相关PDF资料 |
PDF描述 |
|---|---|
| K6F8016T6C-FF55 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016T6C-FF70 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6D | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6D-FF55 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6D-FF70 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K6F8016T6C-FF55 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016T6C-FF70 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6A-EF70 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 512Kx16, 48 Pin, Plastic, BGA |
| K6F8016U6D | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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