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参数资料
| 型号： | K6F8016T6C |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 为512k x16位超低功耗和低电压的CMOS静态RAM全 |
| 文件页数： | 9/9页 |
| 文件大小： | 173K |
| 代理商： | K6F8016T6C |
K6F8016T6C Family
Revision 0.0
July 2003
9
CMOS SRAM
Preliminary
C
PACKAGE DIMENSION
6
5
4
3
2
1
A
B
C
D
E
F
G
H
C
B/2
B
B1
C
B
C
Bottom View
Top View
D
E
E
E
C
Side View
0
0
A
Y
Detail A
Min
Typ
Max
A
-
0.75
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
6.90
7.00
7.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
0.80
0.90
1.00
E1
-
0.58
-
E2
0.27
0.32
0.37
Y
-
-
0.08
#A1
Notes.
1. Ball counts: 48(8 row x 6 column)
2. Ball pitch: (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are
±
0.050 unless
specified beside figure.
4. Typ: Typical
5. Y is coplanarity: 0.08(Max)
Unit: millimeters
48 BALL FINE PITCH BALL GRID ARRAY(0.75mm ball pitch)
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| K6F8016T6C-FF55 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016T6C-FF70 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6D | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6D-FF55 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| K6F8016T6C-FF55 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016T6C-FF70 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6A-EF70 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 512Kx16, 48 Pin, Plastic, BGA |
| K6F8016U6D | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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