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参数资料
| 型号： | K6X1008C2D-DF70 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分类： | DRAM |
| 英文描述： | 128Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 128Kx8位低功耗CMOS静态RAM |
| 文件页数： | 3/10页 |
| 文件大小： | 176K |
| 代理商： | K6X1008C2D-DF70 |
CMOS SRAM
K6X1008C2D Family
Revision 1.0
September 2003
3
PRODUCT LIST
1. Lead Free Product
Commercial Products(0~70
°
C)
Industrial Products(-40~85
°
C)
Automotive Products(-40~125
°
C)
Part Name
Function
Part Name
Function
Part Name
Function
K6X1008C2D-DB55
K6X1008C2D-DB70
K6X1008C2D-GB55
K6X1008C2D-GB70
K6X1008C2D-BB55
1)
K6X1008C2D-BB70
1)
K6X1008C2D-TB55
K6X1008C2D-TB70
K6X1008C2D-PB55
1)
K6X1008C2D-PB70
1)
32-DIP, 55ns, LL
32-DIP, 70ns, LL
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
K6X1008C2D-DF55
K6X1008C2D-DF70
K6X1008C2D-GF55
K6X1008C2D-GF70
K6X1008C2D-BF55
1)
K6X1008C2D-BF70
1)
K6X1008C2D-TF55
K6X1008C2D-TF70
K6X1008C2D-PF55
1)
K6X1008C2D-PF70
1)
32-DIP, 55ns, LL
32-DIP, 70ns, LL
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
32-TSOP-F, 55ns, LL
32-TSOP-F, 70ns, LL
K6X1008C2D-GQ55
K6X1008C2D-GQ70
K6X1008C2D-TQ55
K6X1008C2D-TQ70
32-SOP, 55ns, L
32-SOP, 70ns, L
32-TSOP-F, 55ns, L
32-TSOP-F, 70ns, L
FUNCTIONAL DESCRIPTION
1. X means don
′
t care (Must be in high or low states)
CS
1
CS
2
OE
WE
I/O
Mode
Power
H
X
1)
L
X
1)
X
1)
High-Z
Deselected
Standby
X
1)
L
X
1)
H
X
1)
H
High-Z
Deselected
Standby
H
High-Z
Output Disabled
Active
L
H
L
H
Dout
Read
Active
L
H
X
1)
L
Din
Write
Active
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to V
CC+
0.5V(Max. 7.0V)
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.3 to 7.0
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
K6X1008C2D-B
-40 to 85
K6X1008C2D-F
-40 to 125
K6X1008C2D-Q
相关PDF资料 |
PDF描述 |
|---|---|
| K6X1008C2D-PB55 | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-PF55 | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-Q | 128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-TB55 | 128Kx8 bit Low Power CMOS Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K6X1008C2D-F | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-GB55 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2D-GB70 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6X1008C2DGF55 | 制造商:Samsung Semiconductor 功能描述: |
| K6X1008C2D-GF55 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
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