参数资料
型号: M25PE10-VMN6P
厂商: 意法半导体
元件分类: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 1/60页
文件大小: 310K
代理商: M25PE10-VMN6P
January 2007
Rev 3
1/60
1
M25PE20
M25PE10
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories
with Byte-Alterability, 50 MHz SPI bus, standard pinout
Features
1 or 2 Mbit of Page-Erasable Flash memory
2.7 V to 3.6 V single supply voltage
SPI bus compatible serial interface
50 MHz clock rate (maximum)
Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
SubSector Erase (32 Kbits)
Sector Erase (512 Kbits)
Bulk Erase (1 Mbit for the M25PE10, 2 Mbits for
the M25PE20)
Deep Power-down mode 1μA (typical)
Electronic Signature
– JEDEC Standard Two-Byte Signature
(8012h for M25PE20
8011h for M25PE10)
Software Write Protection on a 64 Kbyte sector
basis
More than 100 000 Write cycles
More than 20 year data retention
Hardware Write Protection of the memory area
selected using the BP0 and BP1 bits
Package
– ECOPACK (RoHS compliant)
SO8N (MN)
150 mil width
VFQFPN8 (MP)
6 × 5 mm
www.st.com
相关PDF资料
PDF描述
M25PE10-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20_07 4 Mbit Uniform Sector, Serial Flash Memory
相关代理商/技术参数
参数描述
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