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参数资料
| 型号： | M25PE10-VMN6P |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 39/60页 |
| 文件大小： | 310K |
| 代理商： | M25PE10-VMN6P |
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M25PE20, M25PE10
Instructions
39/60
6.13
SubSector Erase (SSE)
Note:
The SubSector Erase (SSE) instruction is decoded only in the T9HX process (see
Important
note on page 6
).
The SubSector Erase (SSE) instruction sets to 1 (FFh) all bits inside the chosen subsector.
Before it can be accepted, a Write Enable (WREN) instruction must previously have been
executed. After the Write Enable (WREN) instruction has been decoded, the device sets the
Write Enable Latch (WEL).
The SubSector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by
the instruction code, and three address bytes on Serial Data Input (D). Any address inside
the SubSector (see
Table 5
) is a valid address for the SubSector Erase (SE) instruction.
Chip Select (S) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 21
.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the SubSector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed SubSector Erase cycle (whose duration is t
SSE
) is
initiated. While the SubSector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed SubSector Erase cycle, and is 0 when it is completed. At some
unspecified time before the cycle is complete, the Write Enable Latch (WEL) bit is reset.
A SubSector Erase (SSE) instruction applied to a subsector that contains a page that is
Hardware or software Protected is not executed.
Any SubSector Erase (SSE) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a SubSector Erase (SSE) cycle is in progress, the
SubSector Erase cycle is interrupted and data may not be erased correctly (see
Table 14:
Device status after a Reset Low pulse
). On Reset going Low, the device enters the Reset
mode and a time of t
RHSL
is then required before the device can be re-selected by driving
Chip Select (S) Low. For the value of t
RHSL
see
Table 24: Timings after a Reset Low pulse
in
Section 11: DC and AC parameters
.
Figure 20.
SubSector Erase (SSE)
instruction sequence
1.
Address bits A23 to A18 are Don’t Care in the M25PE20. Address bits A23 to A17 are Don’t Care in the
M25PE10.
24 Bit Address
C
D
AI12356
S
2
1
3
4
5
6
7
8
9
29 30 31
Instruction
0
23 22
2
0
1
MSB
相关PDF资料 |
PDF描述 |
|---|---|
| M25PE10-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20_07 | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25PE10-VMN6TG | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE10-VMN6TP | 功能描述:电可擦除可编程只读存储器 SERIAL PAGE ERASE FLASH 1 Mbit Datas RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M25PE10-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3V/3.3V 1Mbit 128K x 8bit 8ns T/R 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PE10-VMN6TPBA TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8SO |
| M25PE10-VMP6G | 制造商:Micron Technology Inc 功能描述:FLASH SERL-SPI 3.3V 1MBIT 128KX8 8NS 8PIN VDFPN EP - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN |
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