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参数资料
| 型号： | M25PE10-VMN6P |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 44/60页 |
| 文件大小： | 310K |
| 代理商： | M25PE10-VMN6P |
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Power-up and power-down
M25PE20, M25PE10
44/60
7
Power-up and power-down
At Power-up and Power-down, the device must not be selected (that is Chip Select (S) must
follow the voltage applied on V
CC
) until V
CC
reaches the correct value:
V
CC
(min) at Power-up, and then for a further delay of t
VSL
V
SS
at Power-down
A safe configuration is provided in
Section 3: SPI modes
.
●
●
To avoid data corruption and inadvertent write operations during power up, a Power On
Reset (POR) circuit is included. The logic inside the device is held reset while V
CC
is less
than the Power On Reset (POR) threshold value, V
WI
– all operations are disabled, and the
device does not respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page Write (PW), Page Program
(PP), Page Erase (PE) and Sector Erase (SE) instructions until a time delay of t
PUW
has
elapsed after the moment that V
CC
rises above the V
WI
threshold. However, the correct
operation of the device is not guaranteed if, by this time, V
CC
is still below V
CC
(min). No
Write, Program or Erase instructions should be sent until the later of:
t
PUW
after V
CC
passed the V
WI
threshold
t
VSL
after V
CC
passed the V
CC
(min) level
These values are specified in
Table 13
.
●
●
If the delay, t
VSL
, has elapsed, after V
CC
has risen above V
CC
(min), the device can be
selected for READ instructions even if the t
PUW
delay is not yet fully elapsed.
As an extra protection, the Reset (Reset) signal could be driven Low for the whole duration
of the Power-up and Power-down phases.
At Power-up, the device is in the following state:
The device is in the Standby Power mode (not the Deep Power-down mode).
The Write Enable Latch (WEL) bit is reset.
The Write In Progress (WIP) bit is reset
The Lock Registers are reset (Write Lock bit, Lock Down bit) = (0, 0)
●
●
●
●
Normal precautions must be taken for supply rail decoupling, to stabilize the VCC supply.
Each device in a system should have the VCC rail decoupled by a suitable capacitor close to
the package pins. (Generally, this capacitor is of the order of 100 nF).
At Power-down, when VCC drops from the operating voltage, to below the Power On Reset
(POR) threshold voltage, VWI, all operations are disabled and the device does not respond
to any instruction. (The designer needs to be aware that if a Power-down occurs while a
Write, Program or Erase cycle is in progress, some data corruption can result.)
相关PDF资料 |
PDF描述 |
|---|---|
| M25PE10-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20_07 | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25PE10-VMN6TG | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
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| M25PE10-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3V/3.3V 1Mbit 128K x 8bit 8ns T/R 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PE10-VMN6TPBA TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8SO |
| M25PE10-VMP6G | 制造商:Micron Technology Inc 功能描述:FLASH SERL-SPI 3.3V 1MBIT 128KX8 8NS 8PIN VDFPN EP - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN |
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