参数资料
型号: M25PE10-VMN6P
厂商: 意法半导体
元件分类: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 50/60页
文件大小: 310K
代理商: M25PE10-VMN6P
DC and AC parameters
M25PE20, M25PE10
50/60
Table 20.
AC characteristics (25 MHz operation)
Test conditions specified in
Table 16
and
Table 17
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
f
C
f
C
Clock Frequency for the following
instructions: FAST_READ, PW, PP, PE,
SE, DP, RDP, WREN, WRDI, RDSR
D.C.
25
MHz
f
R
Clock Frequency for READ instructions
D.C.
20
MHz
t
CH(1)
t
CL(1)
1.
t
CH
+ t
CL
must be greater than or equal to 1/ f
C
Value guaranteed by characterization, not 100% tested in production.
t
CLH
Clock High Time
18
ns
t
CLL
Clock Low Time
18
ns
Clock Slew Rate
(2)
(peak to peak)
0.1
V/ns
t
SLCH
t
CSS
S Active Setup Time (relative to C)
10
ns
t
CHSL
S Not Active Hold Time (relative to C)
10
ns
t
DVCH
t
DSU
Data In Setup Time
5
ns
t
CHDX
t
DH
Data In Hold Time
5
ns
t
CHSH
S Active Hold Time (relative to C)
10
ns
t
SHCH
S Not Active Setup Time (relative to C)
10
ns
t
SHSL
t
SHQZ(2)
t
CSH
S Deselect Time
200
ns
2.
t
DIS
Output Disable Time
15
ns
t
CLQV
t
V
Clock Low to Output Valid
15
ns
t
CLQX
t
HO
Output Hold Time
0
ns
t
THSL
Top Sector Lock Setup Time
50
ns
t
SHTL
t
DP(2)
t
RDP(2)
Top Sector Lock Hold Time
100
ns
S to Deep Power-down
3
μ
s
S High to Standby Power Mode
30
μ
s
t
PW(3)
3.
When using PP and PW instructions to update consecutive Bytes, optimized timings are obtained with one
sequence including all the Bytes versus several sequences of only a few Bytes. (1
n
256)
Page Write Cycle Time (256 Bytes)
11
25
ms
Page Write Cycle Time (n Bytes)
10.2 +
n*0.8/256
t
PP(3)
Page Program Cycle Time (256 Bytes)
1.2
5
ms
Page Program Cycle Time (n Bytes)
0.4 +
n*0.8/256
t
PE
Page Erase Cycle Time
10
20
ms
t
SE
Sector Erase Cycle Time
1
5
s
相关PDF资料
PDF描述
M25PE10-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20_07 4 Mbit Uniform Sector, Serial Flash Memory
相关代理商/技术参数
参数描述
M25PE10-VMN6TG 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE10-VMN6TP 功能描述:电可擦除可编程只读存储器 SERIAL PAGE ERASE FLASH 1 Mbit Datas RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
M25PE10-VMN6TPBA 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3V/3.3V 1Mbit 128K x 8bit 8ns T/R 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M25PE10-VMN6TPBA TR 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8SO
M25PE10-VMP6G 制造商:Micron Technology Inc 功能描述:FLASH SERL-SPI 3.3V 1MBIT 128KX8 8NS 8PIN VDFPN EP - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN