参数资料
型号: M366S1623DT0-C1H
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: PC100 Unbuffered DIMM
中文描述: PC100的无缓冲DIMM
文件页数: 5/9页
文件大小: 136K
代理商: M366S1623DT0-C1H
M366S1623DT0
PC100 Unbuffered DIMM
Rev. 0.0 Jun. 1999
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
)
Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
Unit
Note
-80
-1H
-1L
Operating current
(one Bank Active)
I
CC1
Burst length =1
t
RC
t
RC
(min)
I
O
= 0 mA
800
760
760
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 10ns
16
mA
I
CC2
PS
CKE & CLK
V
IL
(max), t
CC
=
16
Precharge standby current in
non power-down mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
240
mA
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
96
Active standby current in
power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 10ns
48
mA
I
CC3
PS
CKE & CLK
V
IL
(max), t
CC
=
48
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
400
mA
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
240
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
1,080
960
960
mA
1
Refresh current
I
CC5
t
RC
t
RC
(min)
1,240
1,200
1,200
mA
2
Self refresh current
I
CC6
CKE
0.2V
16
mA
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