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参数资料
| 型号： | M366S1623DT0-C1H |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | PC100 Unbuffered DIMM |
| 中文描述： | PC100的无缓冲DIMM |
| 文件页数： | 8/9页 |
| 文件大小： | 136K |
| 代理商： | M366S1623DT0-C1H |
M366S1623DT0
PC100 Unbuffered DIMM
Rev. 0.0 Jun. 1999
SIMPLIFIED TRUTH TABLE
(V=Valid, X=Don
′
t care, H=Logic high, L=Logic low)
1. OP Code : Operand code
A
0
~ A
11
& BA
0
~ BA
1
: Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 clock cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA
0
~ BA
1
: Bank select addresses.
If both BA
0
and BA
1
are "Low" at read, write, row active and precharge, bank A is selected.
If both BA
0
is "Low" and BA
1
is "High" at read, write, row active and precharge, bank B is selected.
If both BA
0
is "High" and BA
1
is "Low" at read, write, row active and precharge, bank C is selected.
If both BA
0
and BA
1
are "High" at read, write, row active and precharge, bank D is selected.
If A
10
/AP is "High" at row precharge, BA
0
and BA
1
is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
RP
after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
BA
0,1
A
10
/AP
A
11,
A
9
~ A
0
Note
Register
Mode register set
H
X
L
L
L
L
X
OP code
1,2
Refresh
Auto refresh
H
H
L
L
L
H
X
X
3
Self
refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
X
3
H
X
X
X
3
Bank active & row addr.
H
X
L
L
H
H
X
V
Row address
Read &
column address
Auto precharge disable
H
X
L
H
L
H
X
V
L
Column
address
(A
0
~ A
8
)
4
Auto precharge enable
H
4,5
Write &
column address
Auto precharge disable
H
X
L
H
L
L
X
V
L
Column
address
(A
0
~ A
8
)
4
Auto precharge enable
H
4,5
Burst stop
H
X
L
H
H
L
X
X
6
Precharge
Bank selection
H
X
L
L
H
L
X
V
L
X
All banks
X
H
Clock suspend or
active power down
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
X
Precharge power down mode
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
V
V
V
DQM
H
V
X
7
No operation command
H
X
H
X
X
X
X
X
L
H
H
H
Notes :
X
相关PDF资料 |
PDF描述 |
|---|---|
| M366S1623DT0-C1L | PC100 Unbuffered DIMM |
| M366S1623DT0-C80 | PC100 Unbuffered DIMM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M366S1623DT0-C1L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC100 Unbuffered DIMM |
| M366S1623DT0-C1L00 | 制造商:Samsung SDI 功能描述:16M X 64 SDRAM DIMM based on 8M X 8, 4banks, 4K refresh, 3.3V synchronous drams with spd |
| M366S1623DT0-C75 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC133 Unbuffered DIMM |
| M366S1623DT0-C7A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC133 Unbuffered DIMM |
| M366S1623DT0-C80 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PC100 Unbuffered DIMM |
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