参数资料
型号: M58LR128FB95ZB6E
厂商: NUMONYX
元件分类: PROM
英文描述: 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56
封装: 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56
文件页数: 16/82页
文件大小: 1303K
代理商: M58LR128FB95ZB6E
23/82
M58LR128FT, M58LR128FB
Program Suspend Status Bit (SR2). The
Pro-
gram Suspend Status bit indicates that a program
operation has been suspended in the addressed
block. The Program Suspend Status bit should
only be considered valid when the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
When the Program Suspend Status bit is High (set
to ‘1’), a Program/Erase Suspend command has
been issued and the memory is waiting for a Pro-
gram/Erase Resume command.
SR2 is set within the Program Suspend Latency
time of the Program/Erase Suspend command be-
ing issued therefore the memory may still com-
plete the operation rather than entering the
Suspend mode.
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns Low.
Block Protection Status Bit (SR1). The
Block
Protection Status bit is used to identify if a Pro-
gram or Block Erase operation has tried to modify
the contents of a locked block.
When the Block Protection Status bit is High (set
to ‘1’), a program or erase operation has been at-
tempted on a locked block.
Once set High, the Block Protection Status bit
must be set Low by a Clear Status Register com-
mand or a hardware reset before a new program
or erase command is issued, otherwise the new
command will appear to fail.
Bank Write/Multiple Word Program Status Bit
(SR0). The Bank Write Status bit indicates wheth-
er the addressed bank is programming or erasing.
In Buffer Enhanced Factory Program mode the
Multiple Word Program bit shows if the device is
ready to accept a new Word to be programmed to
the memory array.
The Bank Write Status bit should only be consid-
ered valid when the Program/Erase Controller Sta-
tus SR7 is Low (set to ‘0’).
When both the Program/Erase Controller Status bit
and the Bank Write Status bit are Low (set to ‘0’),
the addressed bank is executing a program or
erase operation. When the Program/Erase Con-
troller Status bit is Low (set to ‘0’) and the Bank
Write Status bit is High (set to ‘1’), a program or
erase operation is being executed in a bank other
than the one being addressed.
In Buffer Enhanced Factory Program mode if Mul-
tiple Word Program Status bit is Low (set to ‘0’),
the device is ready for the next Word, if the Multi-
ple Word Program Status bit is High (set to ‘1’) the
device is not ready for the next Word.
For further details on how to use the Status Regis-
ter, see the Flowcharts and Pseudocodes provid-
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M58LR128FB95ZB6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT85ZB6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT85ZB6E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory