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参数资料
| 型号： | M58LW128A150N1 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 |
| 封装： | 14 X 20 MM, PLASTIC, TSOP-56 |
| 文件页数： | 18/65页 |
| 文件大小： | 378K |
| 代理商： | M58LW128A150N1 |
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M58LW128A, M58LW128B
Four successive steps are required to issue the
command.
1. One Bus Write operation is required to set up
the Write to Buffer and Program Command. Is-
sue the set up command with the selected
memory Block Address where the program op-
eration should occur (any address in the block
where the values will be programmed can be
used). Any Bus Read operations will start to out-
put the Status Register after the 1st cycle.
2. Use one Bus Write operation to write the same
block address along with the value N on the
Data Inputs/Output, where N+1 is the number of
Words (x16 Bus Width) or Double Words (x32
Bus Width) to be programmed.
3. Use N+1 Bus Write operations to load the ad-
dress and data for each Word or Double Word
into the Write Buffer. See the constraints on the
address combinations listed below. The ad-
dresses must have the same A5-A23.
4. Finally, use one Bus Write operation to issue the
final cycle to confirm the command and start the
Program operation.
Invalid address combinations or failing to follow
the correct sequence of Bus Write cycles will set
an error in the Status Register and abort the oper-
ation without affecting the data in the memory ar-
ray. The Status Register should be cleared before
re-issuing the command.
The minimum buffer size for a program operation
is an 8 Word (or 4 Double Word) page. Inside the
page the 8 Words are selected by addresses A3,
A2 and A1.
For any page, only one Write to Buffer and Pro-
gram Command can be issued inside a previously
erased block. Any further Program operations on
that page must be preceded by an Erase operation
on the respective block.
If the block being programmed is protected an er-
ror will be set in the Status Register and the oper-
ation will abort without affecting the data in the
memory array. The block must be unprotected us-
ing the Blocks Unprotect command or by using the
Blocks Temporary Unprotect feature of the Reset/
Power-Down pin, RP.
See Appendix C, Figure 25, Write to Buffer and
Program Flowchart and Pseudo Code, for a sug-
gested flowchart on using the Write to Buffer and
Program command.
Program/Erase Suspend Command. The
Pro-
gram/Erase Suspend command is used to pause a
Write to Buffer and Program or Erase operation.
The command will only be accepted during a Pro-
gram or an Erase operation. It can be issued at
any time during an Erase operation but will only be
accepted during a Write to Buffer and Program
command if the Program/Erase Controller is run-
ning.
One Bus Write cycle is required to issue the Pro-
gram/Erase Suspend command and pause the
Program/Erase Controller. Once the command is
issued it is necessary to poll the Program/Erase
Controller Status bit (bit 7) to find out when the
Program/Erase Controller has paused; no other
commands will be accepted until the Program/
Erase Controller has paused. After the Program/
Erase Controller has paused, the memory will con-
tinue to output the Status Register until another
command is issued.
During the polling period between issuing the Pro-
gram/Erase Suspend command and the Program/
Erase Controller pausing it is possible for the op-
eration to complete. Once the Program/Erase
Controller Status bit (bit 7) indicates that the Pro-
gram/Erase Controller is no longer active, the Pro-
gram Suspend Status bit (bit 2) or the Erase
Suspend Status bit (bit 6) can be used to deter-
mine if the operation has completed or is suspend-
ed. For timing on the delay between issuing the
Program/Erase Suspend command and the Pro-
gram/Erase Controller pausing see Table 11.
During Program/Erase Suspend the Read Memo-
ry Array, Read Status Register, Read Electronic
Signature, Read Query and Program/Erase Re-
sume commands will be accepted by the Com-
mand Interface. Additionally, if the suspended
operation was Erase then the Write to Buffer and
Program, and the Program Suspend commands
will also be accepted. When a program operation
is completed inside a Block Erase Suspend the
Read Memory Array command must be issued to
reset the device in Read mode, then the Erase Re-
sume command can be issued to complete the
whole sequence. Only the blocks not being erased
may be read or programmed correctly.
See Appendix C, Figure 26, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
28, Erase Suspend & Resume Flowchart and
Pseudo Code, for suggested flowcharts on using
the Program/Erase Suspend command.
Program/Erase Resume Command. The
Pro-
gram/Erase Resume command can be used to re-
start
the
Program/Erase
Controller
after
a
Program/Erase Suspend operation has paused it.
One Bus Write cycle is required to issue the Pro-
gram/Erase Resume command. Once the com-
mand is issued subsequent Bus Read operations
read the Status Register.
Set Burst Configuration Register Command.
The Set Burst Configuration Register command is
used to write a new value to the Burst Configura-
tion Control Register which defines the burst
length, type, X and Y latencies, Synchronous/
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58LW128A150N1E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128A150N1F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128A150N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128A150N6E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128A150N6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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