参数资料
型号: M68AW128ML55ND6T
厂商: 意法半导体
英文描述: 2 Mbit (128K x16) 3.0V Asynchronous SRAM
中文描述: 2兆位(128K的× 16)3.0V异步SRAM
文件页数: 10/22页
文件大小: 335K
代理商: M68AW128ML55ND6T
M68AW128M
10/22
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. De-
signers should check that the operating conditions
in their projects match the measurement condi-
tions when using the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Figure 6. AC Measurement I/O Waveform
Figure 7. AC Measurement Load Circuit
Parameter
M68AW128M
V
CC
Supply Voltage
2.7 to 3.6V
Ambient Operating Temperature
Range 1
0 to 70°C
Range 6
–40 to 85°C
Load Capacitance (C
L
)
30pF
Output Circuit Protection Resistance (R
1
)
3.0k
Load Resistance (R
2
)
3.1k
Input Rise and Fall Times
1ns/V
Input Pulse Voltages
0 to V
CC
Input and Output Timing Ref. Voltages
V
CC
/2
Output Transition Timing Ref. Voltages
V
RL
= 0.3V
CC
; V
RH
= 0.7V
CC
AI05831
VCC
I/O Timing Reference Voltage
0V
VCC/2
VCC
Output Timing Reference Voltage
0V
0.7VCC
0.3VCC
AI05832
VCC
OUT
CL includes probe and 1 TTLcapacitance
DEVICE
UNDER
TEST
CL
R1
R2
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