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RoHs Compliant
Silicon Step Recovery Diodes
V4
MA43000, MA44600 Series
2
Electrical Specifications @ TA = +25 °C
Part Number
1
Minimum Reverse
Voltage
2
(VR)
Junction
Capacitance(Cj)
3
Min./Max.
Minimum
Lifetime
(TL)
Transition Time (Ts)
4
Vr=6V
If=10mA/
Ir=6mA
(V)
(pF)
(nS)
(pS)
Nominal
Max
MA44621A
20
0.200-0.300
7
50
100
MA44631A
30
0.300-0.500
8
70
100
MA44631C
30
0.700-0.900
8
70
100
MA44641A
40
0.400-0.600
12
90
150
Snap Varactors
Notes:
1.
When ordering, specify the desired case style by adding the case designation as a suffix to the model number. Case styles for the MA44600 series
are -30,-91 and –93. To order chip form, add the suffix “-134” to the model number. The nominal chip size for the MA44600 series is 15 mils.
2.
Reverse voltage (VR) is measured at a reverse bias current of 10A.
3.
Junction capacitance is measured at a reverse voltage of 6V and a frequency of 1MHz.
4.
Transition time is measured between 20% and 80% points on the voltage recovery trace. Test conditions are +10mA and –10 volts.
Specifications Subject to Change Without Notice.
High Power Circuit Tested Step Recovery Diodes
Part Number
1
Minimum
Reverse
Voltage
2
(VR)
Min./Max
Junction
Capacitance
(Cj)
3
Min./Max.
Lifetime
(TL)
Min./Max.
Maximum
Snap Time
(Ts)
4
Maximum
Thermal
Resistance
(
θjc)
Vr=6V
If=10mA/
Ir=6mA
(V)
(pF)
(nS)
(pS)
(°C/W)
MA43000
85-105
3.00-4.50
250-500
100
12
MA43002
45-70
1.60-2.40
75-225
100
25
MA43004
30-45
0.45-0.85
20-50
100
45
Part Number
1
Case Style
Minimum
Output Power
Input
Frequency
Output
Frequency
Maximum
Input Power
(Watts)
(GHz)
(Watts)
MA43000
103
4.0
0.333
2.000
15
MA43002
91
1.5
2.000
6.000
5
MA43004
91
0.3
3.300
13.000
2