参数资料
型号: MB9BF305NABGL
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PBGA112
封装: 10 X 10 MM, 1.45 MM HEIGHT, 0.80 MM PITCH, PLASTIC, FBGA-112
文件页数: 99/104页
文件大小: 1005K
代理商: MB9BF305NABGL
94
FUJITSU SEMICONDUCTOR CONFIDENTIAL
r3.0
MB9B300A Series
Flash Memory Write/Erase Characteristics
(Vcc = 2.7V to 5.5V, Ta = - 40
°C to + 85°C)
Value
Parameter
Min
Typ
Max
Value
Remarks
Large Sector
0.6
3.1
Sector erase
time
Small Sector
-
0.3
1.6
s
Excludes write time prior to internal
erase
Half word (16 bit)
write time
-
25
400
μs
Not including system-level overhead
time.
Chip erase time
-
7.2
37.6
s
Excludes write time prior to internal
erase
Erase/write cycles and data hold time
Erase/write cycles
(cycle)
Data hold time
(year)
Remarks
1,000
20 *
10,000
10 *
100,000
5 *
*: This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at + 85
°C) .
DS706-00024-1v0-E
相关PDF资料
PDF描述
MB9BF305NAPMC 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PQFP100
MB9BF306RAPMC 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PQFP120
MB9BF305RAPMC 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PQFP120
MB9BF306NAPMC 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PQFP100
MB9BF318SPMC 32-BIT, FLASH, RISC MICROCONTROLLER, PQFP144
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