参数资料
型号: MBR10100CT
元件分类: 整流器
英文描述: 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 2/4页
文件大小: 161K
代理商: MBR10100CT
Number: DB-027
March 2010 Release, Revision F
Page 2
TAK CHEONG
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
f = 1MHz
Ta = 25
10.0
100.0
1000.0
0
5
10
15
20
25
30
35
40
Reverse Voltage [V]
Ty
p
ic
a
lJ
u
nc
ti
o
n
C
a
pa
c
it
a
nc
e
[p
F
]
MBR10150CT
MBR10200CT
MBR10100CT
0
2
4
6
8
10
0
25
50
75
100
125
150
Tc - Case Tem perature [
℃]
A
ver
a
g
e
F
o
rw
a
rd
C
u
rr
en
t[
A
]
0.010
0.100
1.000
10.000
100.000
1000.000
10000.000
0
1020
3040506070
8090
100
VR - Reverse Voltage [V]
IR
-
R
ever
se
C
u
rr
et
n
[u
A
]
Ta=25
Ta=75
Ta=125
Ta= 150
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
VF - Instantaneous Forward Voltage [V]
IF
-
For
w
a
rd
C
u
rr
e
n
t
[m
A
]
Ta=75
Ta=125℃
Ta=150℃
Ta=25
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
0
1020
3040
5060
708090
100
VR - Reverse Voltage [V]
IR
-R
e
ver
se
C
u
rr
en
t
[u
A
])
Ta=25
Ta=75
Ta=125
Ta= 150
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
0
15
30
45
60
75
90
105
120
135
150
VR - Reverse Voltage [V]
IR
-
R
ever
se
C
u
rr
en
t
[u
A
])
Ta=25
Ta=75
Ta=125
Ta= 150
Figure 3. MBR10100CTTypical Reverse Current (Per Diode)
Figure 1. Forward Current Derating Curve (Per Diode)
Figure 2. Junction Capacitance (Per Diode)
Figure 4. MBR10150CTTypical Reverse Current (Per Diode)
Figure 5. MBR10200CTTypical Reverse Current (Per Diode)
Figure 6. MBR10100CT Typical Forward Voltage (Per Diode)
相关PDF资料
PDF描述
MBR10200F 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR1060F 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR1080F 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR1035/45-E3 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC
MBR1050/45-E3 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC
相关代理商/技术参数
参数描述
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