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| 型号： | MBR2045-1PBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | LEAD FREE, PLASTIC, MODIFIED TO-262, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 133K |
| 代理商： | MBR2045-1PBF |
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94305
2
Revision: 14-Aug-08
MBRB20..CTPbF/MBR20..CT-1PbF
Vishay High Power Products Schottky Rectifier, 2 x 10 A
Note
(1) Pulse width < 300 s, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
per leg
IF(AV)
TC = 135 °C, rated VR
10
A
per device
20
Peak repetitive forward current per leg
IFRM
Rated VR, square wave, 20 kHz, TC = 135 °C
20
Non-repetitive peak surge current
IFSM
5 s sine or 3 s rect. pulse
Following any rated load condition
and with rated VRRM applied
1060
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
Non-repetitive avalanche energy
per leg
EAS
TJ = 25 °C, IAS = 2 A, L = 4 mH
8
mJ
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 s
Frequency limited by TJ maximum VA = 1.5 x VR typical
2A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum forward voltage drop
VFM (1)
20 A
TJ = 25 °C
0.84
V
10 A
TJ = 125 °C
0.57
20 A
0.72
Maximum instantaneous
reverse current
IRM (1)
TJ = 25 °C
Rated DC voltage
0.1
mA
TJ = 125 °C
15
Threshold voltage
VF(TO)
TJ = TJ maximum
0.354
V
Forward slope resistance
rt
17.6
m
Ω
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
600
pF
Typical series inductance
LS
Measured from top of terminal to mounting plane
8.0
nH
Maximum voltage rate of change
dV/dt
Rated VR
10 000
V/s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction temperature range
TJ
- 65 to 150
°C
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
2.0
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
Approximate weight
2g
0.07
oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf cm
(lbf in)
maximum
12 (10)
Marking device
Case style D2PAK
MBRB2045CT
Case style TO-262
MBR2045CT-1
相关PDF资料 |
PDF描述 |
|---|---|
| MBR2045-1 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR2035CT | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2045CT-1 | 10 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR2535CT-1 | 15 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR2545CT | 15 A, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR2045C | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER |
| MBR2045C_10 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| MBR2045C_11 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER |
| MBR2045CG-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
| MBR2045CG-TF3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES |
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