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参数资料
| 型号： | NCP565MN30T2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3V 1.5A 6-DFN |
| 标准包装： | 3,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3V |
| 输入电压： | 最高 9V |
| 电压 - 压降（标准）： | 0.9V @ 1.5A |
| 稳压器数量： | 1 |
| 电流 - 输出： | 1.5A |
| 电流 - 限制（最小）： | 1.6A |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-VDFN 裸露焊盘 |
| 供应商设备封装： | 6-DFN（3x3） |
| 包装： | 带卷 (TR) |
NCP565, NCV565
ABSOLUTE MAXIMUM RATINGS
Input Voltage (Note 1)
Output Pin Voltage
Adjust Pin Voltage
Rating
Symbol
V in
V out
V adj
Value
18
? 0.3 to V in + 0.3
? 0.3 to V in + 0.3
Unit
V
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE:
This device series contains ESD protection and exceeds the following tests:
Human Body Model JESD 22 ? A114 ? B
Machine Model JESD 22 ? A115 ? A
THERMAL CHARACTERISTICS
Rating
Thermal Characteristics SOT ? 223 (Notes 1, 2)
Thermal Resistance, Junction ? to ? Ambient
Thermal Resistance, Junction ? to ? Pin
Thermal Characteristics DFN6 (Notes 1, 2)
Thermal Resistance, Junction ? to ? Ambient
Thermal Resistance, Junction ? to ? Pin
Thermal Characteristics D 2 PAK (5ld) (Notes 1, 2)
Thermal Resistance, Junction ? to ? Case
Thermal Resistance, Junction ? to ? Ambient
Thermal Resistance, Junction ? to ? Pin
Symbol
R q JA
R q JP
R q JA
R q JP
R q JC
R q JA
R q JP
Value
107
12
176
37
3
105
4
Unit
? C/W
? C/W
? C/W
OPERATING RANGES
Operating Input Voltage (Note 1)
Operating Junction Temperature Range
Operating Ambient Temperature Range
Storage Temperature Range
Rating
Symbol
V in
T J
T A
T stg
Value
V out + V DO ,
2.5 (Note 3) to 9
? 40 to 150
? 40 to 125
? 55 to 150
Unit
V
? C
? C
? C
1. Refer to Electrical Characteristics and Application Information for Safe Operating Area.
2. As measured using a copper heat spreading area of 50 mm 2 , 1 oz copper thickness.
3. Minimum V in = (V out + V DO ) or 2.5 V, whichever is higher.
http://onsemi.com
3
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