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参数资料
| 型号： | MCH5702 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MCPH5, 5 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 39K |
| 代理商： | MCH5702 |
MCH5702
No.7076-2/5
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
VCB=12V, IE=0
0.1
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
0.1
A
DC Current Gain
hFE
VCE=2V, IC=100mA
200
560
Gain-Bandwidth Product
fT
VCE=2V, IC=300mA
450
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
9
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=750mA, IB=15mA
130
200
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=750mA, IB=15mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10A, IE=0
15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
15
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10A, IC=0
5
V
Turn-ON Time
ton
See specified Test Circuit.
40
ns
Storage Time
tstg
See specified Test Circuit.
180
ns
Fall Time
tf
See specified Test Circuit.
20
ns
[SBD]
Reverse Voltage
VR
IR=0.5mA
30
V
VF1IF=0.3A
0.35
0.40
V
Forward Voltage
VF2IF=0.5A
0.42
0.47
V
VF3IF=0.7A
0.5
0.55
V
Reverse Current
IR
VR=10V
200
A
Interterminal Capacitance
C
VR=10V, f=1MHz
20
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit
10
ns
Electrical Connection
Switching Time Test Circuit
trr Test Circuit
[TR]
[SBD]
VR
RB
VCC=5V
VBE= --5V
++
50
INPUT
OUTPUT
RL
220
F
470
F
PW=20
s
IB2
D.C.
≤1%
IB1
IC=20IB1= --20IB2=750mA
Duty
≤10%
50
100
10
--5V
trr
100mA
10mA
10
s
54
12
3
(Top view)
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