参数资料
型号: MCH6423
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 小信号晶体管
英文描述: 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MCPH6, 6 PIN
文件页数: 2/4页
文件大小: 32K
代理商: MCH6423
MCH6423
No.8944-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Total Gate Charge
Qg
VDS=30V, VGS=10V, ID=2A
6.4
nC
Gate-to-Source Charge
Qgs
VDS=30V, VGS=10V, ID=2A
1.1
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=10V, ID=2A
1.1
nC
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.85
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm
7022-009
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
12
3
65
4
32
5
46
Top View
Bottom View
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID=1A
RL=30
VDD=30V
VOUT
MCH6423
VIN
10V
0V
VIN
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain
Current,
I
D
--
A
RDS(on) -- VGS
RDS(on) -- Ta
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Gate-to-Source Voltage, VGS -- V
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Ambient Temperature, Ta --
°C
1.0
1.5
4.0
0.5
2.0
2.5
3.0
3.5
0
0.2
0.4
0.6
1.2
1.8
1.6
1.4
1.0
0.8
0
1.2
1.0
0.8
0.2
0.4
0.6
IT07434
0
0.5
1.0
1.5
2.0
2.5
4.0
3.0
3.5
IT07435
IT10106
02
4
6
8
20
10
12
14
16
18
IT10105
400
100
200
150
250
350
300
T
a=75
°C
75
°C
25
°C
--25
°C
T
a=
--25
°C
Ta=25
°C
5.0V
3.0V
VGS=2.5V
VDS=10V
10.0V
4.0V 3.5V
--60
50
100
300
350
200
250
150
400
--40
--20
0
20
40
60
80
100
120
140
160
I D
=0.5A,
V GS
=4V
I D
=1.0A,
V GS
=10V
6.0V
25
°C
相关PDF资料
PDF描述
MCH6423 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6424 3 A, 60 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET
MCH6424 3 A, 60 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET
MCH6429 6 A, 20 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
MCH6429 6 A, 20 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
MCH6424-TL-E 制造商:SANYO 功能描述:Nch 60V 3A lbogU Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 3A SC-82 制造商:Sanyo 功能描述:0
MCH6428 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
MCH6429 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
MCH6429-TL-E 功能描述:MOSFET N-CH 20V 6A MCPH6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
MCH6431 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications