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参数资料
| 型号： | MCH6438 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 51K |
| 代理商： | MCH6438 |
MCH6438
No. A0889-3/4
0
0.1
0.3
0.5
0.2
0.4
1.0
0.7
0.6
0.8
0.9
0
0.5
1.0
3.0
2.0
1.5
3.5
2.5
4.0
IT11281
7
10
100
5
3
2
3
2
7
1000
5
3
2
IT11279
IT11278
0.001
0.01
23
5
2
72
3
5
7
0.1
35
2
7
010
3050
15
35
55
20
40
525
45
60
10
5
3
7
3
2
7
5
1.0
IT11280
td(on)
td(off)
tf
tr
VDD=30V
VGS=4V
Ciss
Coss
Crss
VDS=30V
ID=200mA
0.1
1.0
23
5
7
2
10
35
7
2
100
35
7
10
7
5
3
2
100
7
5
3
2
VDS=10V
25°
C
Ta=75
°C
--25
°C
f=1MHz
1000
7
5
3
VGS -- Qg
SW Time -- ID
Ciss, Coss, Crss -- VDS
yfs -- ID
Drain Current, ID -- A
Switching
T
ime,
SW
T
ime
-
ns
Drain Current, ID -- mA
Forward
T
ransfer
Admittance,
y
fs
-
mS
Drain-to-Source Voltage, VDS -- V
Ciss,
Coss,
Crss
-
pF
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
IS -- VSD
Diode Forward Voltage, VSD -- V
Source
Current,
I
S
--
m
A
IT11322
0.3
0.4
0.5
0.6
0.7
0.9
0.8
1.0
1.1
0.1
1.0
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
100
VGS=0V
--25
°C
25
°C
Ta
=
75
°C
1000
IT11277
02468
10
IT11276
10
0
2
1
3
5
7
4
6
8
9
Ta=25
°C
--60
0
3
4
5
1
6
2
7
--40
--20
0
20
40
60
80
100
120
140
160
VGS
=2.5V
, ID
=50mA
V GS
=1.5V
, I D
=10mA
VGS
=4.0V
, ID
=100mA
ID=10mA
100mA
50mA
RDS(on) -- VGS
RDS(on) -- Ta
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
Gate-to-Source Voltage, VGS -- V
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
Ambient Temperature, Ta --
°C
A S O
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
IT12773
2
3
5
7
2
0.1
0.01
2
23
5
7 1.0
2
35
7 10
0.1
IDP=0.8A
ID=0.2A
Operation in this
area is limited by RDS(on).
100ms
1ms
DC
operation(T
a=25
°C
)
3
5
7
2
1.0
35
7 100
100
s
10ms
PW
≤10s
Ta=25
°C
Single pulse
Mounted on a ceramic board (1200mm2
0.8mm)
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PDF描述 |
|---|---|
| MCH6438 | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6440 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6444 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6444-TL-H | 功能描述:MOSFET PNP+NPN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6445 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6445-TL-E | 功能描述:MOSFET N-CH 60V 4A MCPH6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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