参数资料
型号: MCM63P818ZP66
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: SRAM
英文描述: 256K X 18 CACHE SRAM, 7 ns, PBGA119
封装: 7 X 17 MM, PLASTIC, BGA-119
文件页数: 4/21页
文件大小: 451K
代理商: MCM63P818ZP66
MCM63P736
MCM63P818
12
MOTOROLA FAST SRAM
SUPPLY CURRENTS
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Input Leakage Current (0 V
≤ Vin ≤ VDD)
Ilkg(I)
± 1
A
1
Output Leakage Current (0 V
≤ Vin ≤ VDDQ)
Ilkg(O)
± 1
A
AC Supply Current (Device Selected,
MCM63P736 / 818–133
All Outputs Open, Freq = Max)
MCM63P736 / 818–100
Includes VDD Only
MCM63P736 / 818–66
IDDA
450/380
410/345
350/285
mA
2, 3, 4
CMOS Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at CMOS Levels)
ISB2
15
mA
5, 6
Sleep Mode Standby Current (Device Deselected, Freq = Max,
VDD = Max, All Other Inputs Static at CMOS Levels,
ZZ
≥ VDD – 0.2 V)
IZZ
5
mA
1, 5, 6
TTL Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at TTL Levels)
ISB3
35
mA
5, 7
Clock Running (Device Deselected,
MCM63P736 / 818–133
Freq = Max, VDD = Max, All Inputs
MCM63P736 / 818–100
Toggling at CMOS Levels)
MCM63P736 / 818–66
ISB4
160/145
135/120
110/95
mA
5, 6
Static Clock Running (Device Deselected, MCM63P736 / 818–133
Freq = Max,VDD = Max, All Inputs
MCM63P736 / 818–100
Static at TTL Levels)
MCM63P736 / 818–66
ISB5
65/55
50/40
35/30
mA
5, 6
NOTES:
1. LBO and ZZ pins have an internal pull–up and pull–down, respectively; and will exhibit leakage currents of
± 5 A.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. All addresses transition simultaneously low (LSB) then high (MSB).
4. Data states are all zero.
5. Device is deselected as defined by the Truth Table.
6. CMOS levels for I/Os are VIT ≤ VSS + 0.2 V or ≥ VDDQ – 0.2 V. CMOS levels for other inputs are Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V.
7. TTL levels for I/Os are VIT ≤ VIL or ≥ VIH2. TTL levels for other inputs are Vin ≤ VIL or ≥ VIH.
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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